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Part Details for IRF3808STRLPBF by Infineon Technologies AG
Results Overview of IRF3808STRLPBF by Infineon Technologies AG
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (8 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF3808STRLPBF Information
IRF3808STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF3808STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34AC1769
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Newark | Mosfet, N-Ch, 75V, 106A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:106A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.0059Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRF3808STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2943 |
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$1.4900 / $3.8500 | Buy Now |
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DISTI #
IRF3808STRLPBFCT-ND
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DigiKey | MOSFET N-CH 75V 106A D2PAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
400 In Stock |
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$1.3518 / $3.9900 | Buy Now |
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DISTI #
IRF3808STRLPBF
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Avnet Americas | Power MOSFET, N Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRF3808STRLPBF) COO: Malaysia RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Tape & Reel | 0 |
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$1.1094 / $1.1325 | Buy Now |
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DISTI #
942-IRF3808STRLPBF
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Mouser Electronics | MOSFETs MOSFT 75V 105A 7mOhm 150nC RoHS: Compliant | 1053 |
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$1.4600 / $3.8700 | Buy Now |
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DISTI #
E02:0323_00176111
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Arrow Electronics | Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R COO: Mexico RoHS: Exempt Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks Date Code: 2526 | Europe - 6400 |
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$1.3431 | Buy Now |
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DISTI #
V72:2272_13890385
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Arrow Electronics | Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2304 Container: Cut Strips | Americas - 476 |
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$1.1556 / $1.2342 | Buy Now |
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DISTI #
70017668
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RS | POWER MOSFET, N-CH, VDSS 75V, RDS(ON) 5.9 MILLIOHMS, ID 106A, D2PAK, PD 200W, VGS+/-20V Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$4.3200 / $5.3800 | RFQ |
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Future Electronics | Single N-Channel 75 V 7 mOhm 150 nC HEXFET® Power Mosfet - D2-PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks Container: Reel | 0Reel |
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$1.5100 / $1.5400 | Buy Now |
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Future Electronics | Single N-Channel 75 V 7 mOhm 150 nC HEXFET® Power Mosfet - D2-PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks Container: Reel | 0Reel |
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$1.5100 / $1.5400 | Buy Now |
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DISTI #
91537645
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Verical | Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R RoHS: Exempt Min Qty: 800 Package Multiple: 800 Date Code: 2426 | Americas - 26400 |
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$1.3291 / $1.6321 | Buy Now |
Part Details for IRF3808STRLPBF
IRF3808STRLPBF CAD Models
IRF3808STRLPBF Part Data Attributes
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IRF3808STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3808STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Avalanche Energy Rating (Eas) | 430 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 106 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 130 Pf | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 550 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRF3808STRLPBF
This table gives cross-reference parts and alternative options found for IRF3808STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3808STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF3808STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF3808STRLPBF vs IRF3808STRR |
IRF3808STRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF3808STRLPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF3808STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF3808STRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
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The maximum allowable power dissipation for the IRF3808STRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.