| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRF530PBF-ND
|
DigiKey | MOSFET N-CH 100V 14A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
6965 In Stock |
|
$0.5075 / $1.3500 | Buy Now | |
|
DISTI #
70459366
|
RS | MOSFET N-CH 100V 14A TO-220AB | Siliconix / Vishay IRF530PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
|
$1.1100 / $1.3000 | RFQ | |
| New Advantage Corporation | Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 14650 |
|
$0.5600 / $0.6000 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
|
Part Package Code
|
TO-220AB
|
|
Package Description
|
ROHS COMPLIANT, TO-220, 3 PIN
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Vishay
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
69 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
14 A
|
|
Drain-source On Resistance-Max
|
0.16 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
56 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF530 | 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF530PBF vs IRF530 |
| IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | Microsemi Corporation | IRF530PBF vs IRF530 |
| IRF530 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | IRF530PBF vs IRF530 |
| IRF530 | 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRF530PBF vs IRF530 |
| IRF530 | Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Dynex Semiconductor | IRF530PBF vs IRF530 |
| IRF530PBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF530PBF vs IRF530PBF |
| IRF530 | 14A, 100V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | IRF530PBF vs IRF530 |
| IRF530 | 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF530PBF vs IRF530 |
| IRF530PBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF530PBF vs IRF530PBF |
| IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF530PBF vs IRF530 |
