Part Details for IRF540 by STMicroelectronics
Results Overview of IRF540 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540 Information
IRF540 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 200 |
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RFQ | ||
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Quest Components | 28 A, 100 V, 0.077 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 65 |
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$1.2100 / $2.2000 | Buy Now |
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Quest Components | 28 A, 100 V, 0.077 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 57 |
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$1.7600 / $3.2000 | Buy Now |
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Quest Components | 28 A, 100 V, 0.077 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 47 |
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$1.3750 / $2.2000 | Buy Now |
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Quest Components | 28 A, 100 V, 0.077 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 27 |
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$1.1000 / $1.3750 | Buy Now |
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Chip 1 Exchange | INSTOCK | 718 |
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RFQ |
US Tariff Estimator: IRF540 by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for IRF540
IRF540 CAD Models
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IRF540 Part Data Attributes
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IRF540
STMicroelectronics
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Datasheet
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IRF540
STMicroelectronics
22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 220 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 100 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 230 Ns | |
| Turn-on Time-Max (ton) | 105 Ns |
Alternate Parts for IRF540
This table gives cross-reference parts and alternative options found for IRF540. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BUK455-100A | NXP Semiconductors | Check for Price | TRANSISTOR 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | IRF540 vs BUK455-100A |
| IRF540-001 | International Rectifier | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF540 vs IRF540-001 |
| IRF540PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540 vs IRF540PBF |
| IRF542 | New Jersey Semiconductor Products Inc | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF540 vs IRF542 |
| IRF540 | Microsemi Corporation (now Microchip) | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF540 vs IRF540 |
| IRF542 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540 vs IRF542 |
| IRF542 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF540 vs IRF542 |
| IRF540-010 | International Rectifier | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540 vs IRF540-010 |
| IRF540-006 | International Rectifier | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540 vs IRF540-006 |
| IRF542 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540 vs IRF542 |
IRF540 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540 is not explicitly stated in the datasheet. However, STMicroelectronics provides a SOA curve in the application note AN440, which shows the maximum allowable drain-source voltage and current combinations for the device.
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The junction temperature of the IRF540 can be calculated using the thermal resistance (Rth) and the power dissipation (Pd) of the device. The thermal resistance is given in the datasheet, and the power dissipation can be calculated using the drain-source voltage and current. The junction temperature can then be calculated using the formula: Tj = Tc + (Rth * Pd), where Tc is the case temperature.
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The recommended gate drive voltage for the IRF540 is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance (Rds(on)) of the device, but it may also increase the power consumption and electromagnetic interference (EMI). A lower gate drive voltage can reduce power consumption and EMI, but it may also increase Rds(on) and reduce the device's performance.
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To protect the IRF540 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions. It is also important to ensure that the device is operated within its safe operating area (SOA) and that the thermal design is adequate to prevent overheating.
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Yes, the IRF540 can be used in high-frequency switching applications, but it is important to consider the device's switching characteristics, such as the rise and fall times, and the gate drive requirements. The device's datasheet provides information on its switching characteristics, and application notes are available from STMicroelectronics that provide guidance on designing high-frequency switching circuits with the IRF540.