Datasheets
IRF540NSTRL by:

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

Part Details for IRF540NSTRL by International Rectifier

Overview of IRF540NSTRL by International Rectifier

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Price & Stock for IRF540NSTRL

Part # Distributor Description Stock Price Buy
Bristol Electronics   1008
RFQ
Bristol Electronics   709
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-263AB 249
  • 1 $1.2720
  • 21 $0.7632
  • 80 $0.6360
$0.6360 / $1.2720 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 551
  • 1 $3.6000
  • 105 $2.2200
  • 451 $1.9800
$1.9800 / $3.6000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 55
  • 1 $3.6000
  • 9 $2.6400
  • 29 $2.4000
$2.4000 / $3.6000 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant Europe - 2990
RFQ

Part Details for IRF540NSTRL

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IRF540NSTRL Part Data Attributes

IRF540NSTRL International Rectifier
Buy Now Datasheet
Compare Parts:
IRF540NSTRL International Rectifier Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Pbfree Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code D2PAK
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 185 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF540NSTRL

This table gives cross-reference parts and alternative options found for IRF540NSTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF540NSTRRPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRL vs IRF540NSTRRPBF
IRF540NSPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRL vs IRF540NSPBF
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRL vs IRF540NS
IRF540NSPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NSPBF
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRL vs IRF540NSTRLPBF
IRF540NSTRRPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NSTRRPBF
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NS
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NSTRLPBF
Part Number Description Manufacturer Compare
IRF540NSPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NSPBF
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NS
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRL vs IRF540NS
IRF540NSTRRPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NSTRRPBF
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRL vs IRF540NSTRLPBF

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