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Transistors / Power Field-Effect Transistors / IRF540NSTRRPBF
Datasheets
IRF540NSTRRPBF by:

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF540NSTRRPBF by Infineon Technologies AG

Overview of IRF540NSTRRPBF by Infineon Technologies AG

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Price & Stock for IRF540NSTRRPBF

Part # Distributor Description Stock Price Buy
DISTI # 19K8212
Newark N Channel Mosfet, 100V, 6.5A D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF540NSTRRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 291
  • 1 $0.5460
  • 10 $0.5460
  • 25 $0.5460
  • 50 $0.5460
  • 100 $0.5460
  • 250 $0.5460
  • 500 $0.5460
  • 1,600 $0.5460
$0.5460 Buy Now
DISTI # 70017460
RS MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Milliohms, ID 33A, D2Pak, PD 130W, VGS+/-20V | Infineon IRF540NSTRRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $0.9800
  • 100 $0.9300
  • 500 $0.8900
  • 1,000 $0.8400
$0.8400 / $0.9800 RFQ
Ameya Holding Limited Single N-Channel 100 V 44 mOhm 71nC HEXFET® Power Mosfet - D2PAK 2978
RFQ
CHIPMALL.COM LIMITED MOSFET N-CH 100V 33A D2PAK 244
  • 1 $0.8569
$0.8569 Buy Now
DISTI # 2467992
element14 Asia-Pacific MOSFET, N CH, 100V, 33A, TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape 2396
  • 1 $1.3020
  • 10 $1.0740
  • 100 $0.9269
  • 500 $0.8607
  • 800 $0.7283
  • 2,400 $0.6885
  • 9,600 $0.5848
$0.5848 / $1.3020 Buy Now
DISTI # 2467992RL
element14 Asia-Pacific MOSFET, N CH, 100V, 33A, TO-263-3 RoHS: Compliant Min Qty: 100 Container: Reel 2396
  • 100 $0.9269
  • 500 $0.8607
  • 800 $0.7283
  • 2,400 $0.6885
  • 9,600 $0.5848
$0.5848 / $0.9269 Buy Now
DISTI # 2467992
Farnell MOSFET, N CH, 100V, 33A, TO-263-3 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape 2396
  • 1 $1.6836
  • 10 $1.1986
  • 100 $0.9913
  • 500 $0.7564
  • 1,000 $0.7111
  • 5,000 $0.5541
$0.5541 / $1.6836 Buy Now
DISTI # 2467992RL
Farnell MOSFET, N CH, 100V, 33A, TO-263-3 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel 2396
  • 100 $0.9913
  • 500 $0.7564
  • 1,000 $0.7111
  • 5,000 $0.5541
$0.5541 / $0.9913 Buy Now

Part Details for IRF540NSTRRPBF

IRF540NSTRRPBF CAD Models

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IRF540NSTRRPBF Part Data Attributes

Parametric Data
IRF540NSTRRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF540NSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Date Of Intro 1996-04-01
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 185 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF540NSTRRPBF

This table gives cross-reference parts and alternative options found for IRF540NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF540NSTRRPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRRPBF vs IRF540NSTRRPBF
IRF540NSPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRRPBF vs IRF540NSPBF
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRRPBF vs IRF540NS
IRF540NSPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRRPBF vs IRF540NSPBF
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRRPBF vs IRF540NSTRLPBF
IRF540NSTRL Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRRPBF vs IRF540NSTRL
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRRPBF vs IRF540NS
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRRPBF vs IRF540NSTRLPBF
Part Number Description Manufacturer Compare
IRF540NSPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRRPBF vs IRF540NSPBF
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRRPBF vs IRF540NS
IRF540NS Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRRPBF vs IRF540NS
IRF540NSTRL Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF540NSTRRPBF vs IRF540NSTRL
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF540NSTRRPBF vs IRF540NSTRLPBF

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