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Transistors Power Field-Effect Transistors IRF610

Transistors
IRF610
Description: Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IRF610 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for IRF610 by Samsung Semiconductor

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   25
RFQ

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Part Data Attributes for IRF610 by Samsung Semiconductor
Parametric Data

IRF610
Samsung Semiconductor
Buy Now
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
46 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
3.3 A
Drain-source On Resistance-Max
1.58 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
43 W
Power Dissipation-Max (Abs)
43 W
Pulsed Drain Current-Max (IDM)
8 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
34 ns
Turn-on Time-Max (ton)
38 ns
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  1. IRF610
    Samsung Semiconductor
    Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for IRF610

This table gives cross-reference parts and alternative options found for IRF610. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF610-001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF610 vs IRF610-001
IRF611PBF Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF610 vs IRF611PBF
IRF610 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF610 vs IRF610
RFP2N15 2A, 150V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF610 vs RFP2N15
IRF610 IRF610 Texas Instruments IRF610 vs IRF610
IRF610 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF610 vs IRF610
RFP2N12 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF610 vs RFP2N12
IRF612 2.6A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF610 vs IRF612
IRF610-009 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF610 vs IRF610-009
IRF612 Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF610 vs IRF612
Part Number Description Manufacturer Compare
RFP2N15 2A, 150V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF610 vs RFP2N15
IRF612 2A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF610 vs IRF612
IRF611 3.3A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF610 vs IRF611
STP4N20 4A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRF610 vs STP4N20
IRF613 Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF610 vs IRF613
IRF611PBF Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF610 vs IRF611PBF
IRF613PBF 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG IRF610 vs IRF613PBF
IRF611 Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF610 vs IRF611
IRF613PBF Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF610 vs IRF613PBF
IRF612 Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF610 vs IRF612

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