Part Details for IRF6726MTRPBF by Infineon Technologies AG
Overview of IRF6726MTRPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IRF6726MTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF6726MTRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 32A 7-Pin Direct-FET MT T/R - Tape and Reel (Alt: IRF6726MTRPBF) RoHS: Compliant Min Qty: 241 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 3930 Partner Stock |
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$1.3208 / $1.4872 | Buy Now |
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Rochester Electronics | IRF6726 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 3470 |
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$1.2900 / $1.5200 | Buy Now |
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DISTI #
IRF6726MTRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 180A, 89W, DirectFET Min Qty: 4800 | 0 |
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$1.2000 | RFQ |
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Ameya Holding Limited | MOSFET N-CH 30V 32A DIRECTFET | 4696 |
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RFQ |
Part Details for IRF6726MTRPBF
IRF6726MTRPBF CAD Models
IRF6726MTRPBF Part Data Attributes
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IRF6726MTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6726MTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6726MTRPBF
This table gives cross-reference parts and alternative options found for IRF6726MTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6726MTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6726MTR1PBF | Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 | Infineon Technologies AG | IRF6726MTRPBF vs IRF6726MTR1PBF |
| IRF6726MPBF | Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6726MTRPBF vs IRF6726MPBF |