Datasheets
IRF6726MTR1PBF by:

Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3

Part Details for IRF6726MTR1PBF by Infineon Technologies AG

Overview of IRF6726MTR1PBF by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Part Details for IRF6726MTR1PBF

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IRF6726MTR1PBF Part Data Attributes

IRF6726MTR1PBF Infineon Technologies AG
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IRF6726MTR1PBF Infineon Technologies AG Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description CHIP CARRIER, R-XBCC-N3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 260 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.0017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 250 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6726MTR1PBF

This table gives cross-reference parts and alternative options found for IRF6726MTR1PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6726MTR1PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF6726MPBF Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 Infineon Technologies AG IRF6726MTR1PBF vs IRF6726MPBF
IRF6726MTRPBF Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6726MTR1PBF vs IRF6726MTRPBF
IRF6726MPBF Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6726MTR1PBF vs IRF6726MPBF
IRF6726MTRPBF Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 Infineon Technologies AG IRF6726MTR1PBF vs IRF6726MTRPBF
Part Number Description Manufacturer Compare
IRF6726MTRPBF Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6726MTR1PBF vs IRF6726MTRPBF
IRF6726MTRPBF Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 Infineon Technologies AG IRF6726MTR1PBF vs IRF6726MTRPBF
FDMS0300S N-Channel PowerTrench® SyncFET™ 30V, 49A, 1.8mΩ, 3000-REEL onsemi IRF6726MTR1PBF vs FDMS0300S
IRF6726MPBF Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 Infineon Technologies AG IRF6726MTR1PBF vs IRF6726MPBF

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