Part Details for IRF6726MTR1PBF by Infineon Technologies AG
Overview of IRF6726MTR1PBF by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF6726MTR1PBF
IRF6726MTR1PBF CAD Models
IRF6726MTR1PBF Part Data Attributes
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IRF6726MTR1PBF
Infineon Technologies AG
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Datasheet
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IRF6726MTR1PBF
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CHIP CARRIER, R-XBCC-N3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 260 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 32 A | |
Drain-source On Resistance-Max | 0.0017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 250 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF6726MTR1PBF
This table gives cross-reference parts and alternative options found for IRF6726MTR1PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6726MTR1PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF6726MPBF | Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6726MTR1PBF vs IRF6726MPBF |
IRF6726MTRPBF | Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6726MTR1PBF vs IRF6726MTRPBF |
IRF6726MPBF | Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6726MTR1PBF vs IRF6726MPBF |
IRF6726MTRPBF | Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6726MTR1PBF vs IRF6726MTRPBF |