Part Details for IRF7104TRPBF by Infineon Technologies AG
Overview of IRF7104TRPBF by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF7104TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
42Y0394
|
Newark | Mosfet, P-Ch, 20V, 2.3A, Soic, Channel Type:P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:2.3A, Continuous Drain Current Id P Channel:2.3A Rohs Compliant: Yes |Infineon IRF7104TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 18 |
|
$0.4530 / $1.0000 | Buy Now |
|
DISTI #
IRF7104PBFCT-ND
|
DigiKey | MOSFET 2P-CH 20V 2.3A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3053 In Stock |
|
$0.3046 / $1.3400 | Buy Now |
|
DISTI #
42Y0394
|
Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 2.3A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 42Y0394) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 18 Partner Stock |
|
$0.6150 / $1.0000 | Buy Now |
|
DISTI #
IRF7104TRPBF
|
Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 2.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7104TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
|
DISTI #
70017684
|
RS | MOSFET, Power, Dual P-Ch, VDSS -20V, RDS(ON) 0.25Ohm, ID -2.3A, SO-8,PD 2W, VGS +/-12V | Infineon IRF7104TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.5500 / $0.6800 | RFQ |
|
|
Future Electronics | Dual P-Channel 20V 0.25 Ohm 9.3 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks Container: Reel | 0Reel |
|
$0.3000 / $0.3150 | Buy Now |
|
|
Future Electronics | Dual P-Channel 20V 0.25 Ohm 9.3 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks Container: Reel | 0Reel |
|
$0.3000 / $0.3150 | Buy Now |
|
DISTI #
IRF7104TRPBF
|
TME | Transistor: P-MOSFET x2, unipolar, -20V, -2.3A, 2W, SO8 Min Qty: 4000 | 0 |
|
$0.2660 | RFQ |
|
DISTI #
C1S322000482920
|
Chip1Stop | Trans MOSFET P-CH Si 20V 2.3A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 4000 |
|
$0.2780 / $0.3750 | Buy Now |
|
DISTI #
C1S322000482939
|
Chip1Stop | Trans MOSFET P-CH Si 20V 2.3A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes | 4000 |
|
$0.2130 | Buy Now |
Part Details for IRF7104TRPBF
IRF7104TRPBF CAD Models
IRF7104TRPBF Part Data Attributes
|
|
IRF7104TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF7104TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7104TRPBF
This table gives cross-reference parts and alternative options found for IRF7104TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7104TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7104PBF | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7104TRPBF vs IRF7104PBF |
| IRF7104TR | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF7104TRPBF vs IRF7104TR |
| IRF7104 | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRF7104TRPBF vs IRF7104 |
| IRF7104TR | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7104TRPBF vs IRF7104TR |
| IRF7104 | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7104TRPBF vs IRF7104 |
| IRF7104TRPBF | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRF7104TRPBF vs IRF7104TRPBF |