Part Details for IRF7506TRPBF by Infineon Technologies AG
Overview of IRF7506TRPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7506TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39M3575
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Newark | Dual P Channel Mosfet, -30V, Micro8, Channel Type:P Channel, Drain Source Voltage Vds N Channel:-, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:-, Continuous Drain Current Id P Channel:1.7A Rohs Compliant: Yes |Infineon IRF7506TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
IRF7506TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 30V 1.7A 8-Pin Micro8 T/R - Tape and Reel (Alt: IRF7506TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 33 Partner Stock |
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RFQ | |
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DISTI #
70018928
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RS | IRF7506TRPBF Dual P-channel MOSFET Transistor, 1.7 A, 30 V, 8-Pin MSOP | Infineon IRF7506TRPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$0.2900 / $0.3630 | RFQ |
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Rochester Electronics | IRF7506 - 30V Dual P-Channel HEXFET Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 33 |
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$0.2231 / $0.2625 | Buy Now |
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DISTI #
IRF7506TRPBF
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TME | Transistor: P-MOSFET x2, unipolar, -30V, -1.7A, 1.25W, SO8 Min Qty: 4000 | 0 |
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$0.2320 | RFQ |
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Win Source Electronics | MOSFET 2P-CH 30V 1.7A MICRO8 | 15894 |
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$0.7540 / $1.1310 | Buy Now |
Part Details for IRF7506TRPBF
IRF7506TRPBF CAD Models
IRF7506TRPBF Part Data Attributes
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IRF7506TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7506TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 9.6 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7506TRPBF
This table gives cross-reference parts and alternative options found for IRF7506TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7506TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7506TR | Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | IRF7506TRPBF vs IRF7506TR |
| IRF7506 | Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7506TRPBF vs IRF7506 |
| IRF7506PBF | Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 | International Rectifier | IRF7506TRPBF vs IRF7506PBF |