Datasheets
IRF7205 by:

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRF7205 by International Rectifier

Overview of IRF7205 by International Rectifier

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Applications Industrial Automation Motor control systems

Price & Stock for IRF7205

Part # Distributor Description Stock Price Buy
Bristol Electronics   1260
RFQ
Bristol Electronics   5335
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 3178
  • 1 $0.6850
  • 585 $0.2740
  • 2,921 $0.2398
$0.2398 / $0.6850 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 187
  • 1 $0.9500
  • 27 $0.5700
  • 106 $0.4750
$0.4750 / $0.9500 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 581
  • 1 $2.0100
  • 200 $0.7035
  • 427 $0.6533
$0.6533 / $2.0100 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 154
  • 1 $2.0100
  • 61 $1.1055
  • 137 $1.0050
$1.0050 / $2.0100 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Not Compliant Europe - 146
RFQ
Velocity Electronics Our Stock 352
RFQ
Chip 1 Exchange INSTOCK 2349
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 110
  • 1 $0.9200
  • 100 $0.6900
  • 1,000 $0.6000
$0.6000 / $0.9200 Buy Now

Part Details for IRF7205

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IRF7205 Part Data Attributes

IRF7205 International Rectifier
Buy Now Datasheet
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IRF7205 International Rectifier Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.6 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 2.5 W
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7205

This table gives cross-reference parts and alternative options found for IRF7205. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7205, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7205TRPBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7205 vs IRF7205TRPBF
IRF7205TRPBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7205 vs IRF7205TRPBF
IRF7205 Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7205 vs IRF7205
IRF7205PBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7205 vs IRF7205PBF
IRF7205PBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7205 vs IRF7205PBF
Part Number Description Manufacturer Compare
PHN210T TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power NXP Semiconductors IRF7205 vs PHN210T
FDS8947A Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation IRF7205 vs FDS8947A
HUF76105DK8 Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor IRF7205 vs HUF76105DK8
F5H3ND Power Field-Effect Transistor, 5A I(D), 30V, 0.07ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd IRF7205 vs F5H3ND
NDS9956AD84Z Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation IRF7205 vs NDS9956AD84Z
IRF7706PBF Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 International Rectifier IRF7205 vs IRF7706PBF
BSO305N Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG IRF7205 vs BSO305N
NDS9953A Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7205 vs NDS9953A
HAT1036R 12A, 30V, 0.034ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation IRF7205 vs HAT1036R
NDS9956A_NL Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8 Fairchild Semiconductor Corporation IRF7205 vs NDS9956A_NL

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