Parametric results for: IRF7205 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 LOGIC LEVEL COMPATIBLE 5

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 7

11 hits Apply

DS Breakdown Voltage-Min (1)

30 V 7

11 hits Apply

Drain Current-Max (ID) (1)

4.6 A 7

11 hits Apply

Drain-source On Resistance-Max (1)

70 mΩ 7

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

11 hits Apply

MS-012AA 4

11 hits Apply

R-PDSO-G8 7

11 hits Apply

e0 3 e3 4

11 hits Apply

Manufacturer (2)

Infineon Technologies AG 5 International Rectifier 6

11 hits Apply

1 8

11 hits Apply

Number of Elements (1)

1 7

11 hits Apply

Number of Terminals (1)

8 7

11 hits Apply

ENHANCEMENT MODE 7

11 hits Apply

150.0 °C 6

11 hits Apply

PLASTIC/EPOXY 7

11 hits Apply

RECTANGULAR 7

11 hits Apply

SMALL OUTLINE 7

11 hits Apply

Active 2 Obsolete 4 Transferred 5

11 hits Apply

No 2 Yes 2

11 hits Apply

245 2 260 4 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 7

11 hits Apply

2.5 W 4

11 hits Apply

2.5 W 6

11 hits Apply

Surface Mount (1)

YES 7

11 hits Apply