Part Details for IRF730 by International Rectifier
Overview of IRF730 by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF730
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4135 |
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RFQ | ||
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Bristol Electronics | 153 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 480 |
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$0.3920 / $0.8400 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 152 |
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$0.7000 / $1.4000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 108 |
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$0.6250 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 70 |
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$0.7645 / $1.5290 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 32 |
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$0.8400 / $1.4000 | Buy Now |
Part Details for IRF730
IRF730 CAD Models
IRF730 Part Data Attributes
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IRF730
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF730
International Rectifier
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 74 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF730
This table gives cross-reference parts and alternative options found for IRF730. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF730, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF730 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF730 vs IRF730 |
MTP5N40E | 5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF730 vs MTP5N40E |
IRF730 | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF730 vs IRF730 |
BUZ60 | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Rochester Electronics LLC | IRF730 vs BUZ60 |
IRF730 | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-220AB | National Semiconductor Corporation | IRF730 vs IRF730 |
IRF730PBF | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF730 vs IRF730PBF |
IRF730PBF | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF730 vs IRF730PBF |
BUZ60 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | IRF730 vs BUZ60 |
IRF730 | IRF730 | onsemi | IRF730 vs IRF730 |