There are no models available for this part yet.
Overview of IRF7341GPBF by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Automotive
Motor control systems
CAD Models for IRF7341GPBF by Infineon Technologies AG
Part Data Attributes for IRF7341GPBF by Infineon Technologies AG
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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ULTRA LOW RESISTANCE
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Avalanche Energy Rating (Eas)
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140 mJ
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Configuration
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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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55 V
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Drain Current-Max (ID)
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5.1 A
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Drain-source On Resistance-Max
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0.05 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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MS-012AA
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JESD-30 Code
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R-PDSO-G8
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Moisture Sensitivity Level
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1
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Number of Elements
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2
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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42 A
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRF7341GPBF
This table gives cross-reference parts and alternative options found for IRF7341GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7341GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7341TRPBF | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7341GPBF vs IRF7341TRPBF |
| IRF7341UTRPBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 | International Rectifier | IRF7341GPBF vs IRF7341UTRPBF |
| AUIRF7341QTR | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF7341GPBF vs AUIRF7341QTR |
| IRF7341 | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7341GPBF vs IRF7341 |
| IRF7341 | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | IRF7341GPBF vs IRF7341 |
| IRF7341TR | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | IRF7341GPBF vs IRF7341TR |
| IRF7341GTRPBF | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF7341GPBF vs IRF7341GTRPBF |
| IRF7341IPBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN | International Rectifier | IRF7341GPBF vs IRF7341IPBF |
| AUIRF7341QTR | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | IRF7341GPBF vs AUIRF7341QTR |
| AUIRF7341Q | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | IRF7341GPBF vs AUIRF7341Q |