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Transistors / Power Field-Effect Transistors / IRF7342PBF
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IRF7342PBF by:

Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7342PBF by Infineon Technologies AG

Overview of IRF7342PBF by Infineon Technologies AG

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Price & Stock for IRF7342PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7342PBF-ND
DigiKey MOSFET 2P-CH 55V 3.4A 8SO Lead time: 98 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # 70016988
RS IRF7342PBF Dual P-channel MOSFET Transistor, 3.4 A, 55 V, 8-Pin SOIC | Infineon IRF7342PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.1200
  • 10 $1.0700
  • 50 $1.0100
  • 100 $0.9600
$0.9600 / $1.1200 RFQ
Win Source Electronics HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω) | MOSFET 2P-CH 55V 3.4A 8-SOIC 101500
  • 95 $0.5370
  • 230 $0.4410
  • 355 $0.4270
  • 485 $0.4130
  • 625 $0.4000
  • 840 $0.3580
$0.3580 / $0.5370 Buy Now

Part Details for IRF7342PBF

IRF7342PBF CAD Models

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IRF7342PBF Part Data Attributes

Parametric Data
IRF7342PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7342PBF Infineon Technologies AG Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE, SO-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 114 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 3.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 27 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7342PBF

This table gives cross-reference parts and alternative options found for IRF7342PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7342PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7342 Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7342PBF vs IRF7342
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG IRF7342PBF vs IRF7342TRPBF
IRF7342TR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7342PBF vs IRF7342TR
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7342PBF vs IRF7342PBF
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7342PBF vs IRF7342TRPBF
Part Number Description Manufacturer Compare
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7342PBF vs IRF7342TRPBF
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG IRF7342PBF vs IRF7342TRPBF
AUIRF7342QTR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7342PBF vs AUIRF7342QTR
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7342PBF vs IRF7342PBF
IRF7342TR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7342PBF vs IRF7342TR

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