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Transistors Power Field-Effect Transistors IRF7416TR

Transistors
IRF7416TR
Description: Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN

Overview of IRF7416TR by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IRF7416TR by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   7520
RFQ
Bristol Electronics   3030
RFQ
Bristol Electronics   Min Qty: 6 1900
  • 6 $0.8625
  • 25 $0.5606
  • 91 $0.3234
  • 311 $0.2760
  • 672 $0.2415
  • 1,596 $0.2243
$0.2243 / $0.8625 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 2424
  • 1 $1.4000
  • 287 $0.5600
  • 1,430 $0.4900
$0.4900 / $1.4000 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1520
  • 1 $1.1500
  • 105 $0.3450
  • 581 $0.2990
$0.2990 / $1.1500 Buy Now
NexGen Digital   2149
RFQ
Chip 1 Exchange INSTOCK 3928
RFQ
Win Source Electronics   170000
  • 105 $0.4950
  • 250 $0.4060
  • 385 $0.3940
  • 525 $0.3810
  • 680 $0.3680
  • 910 $0.3300
$0.3300 / $0.4950 Buy Now

CAD Models for IRF7416TR by International Rectifier
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Part Data Attributes for IRF7416TR by International Rectifier
Parametric Data

IRF7416TR
International Rectifier
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOIC
Package Description
LEAD FREE, SO-8, 8 PIN
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
370 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
10 A
Drain-source On Resistance-Max
0.02 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
45 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7416TR
    International Rectifier
    Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN
    VS

Alternate Parts for IRF7416TR

This table gives cross-reference parts and alternative options found for IRF7416TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7416TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7416TRPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7416TR vs IRF7416TRPBF
IRF7416GPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7416TR vs IRF7416GPBF
IRF7416PBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7416TR vs IRF7416PBF
IRF7416TR Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7416TR vs IRF7416TR
IRF7416GPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7416TR vs IRF7416GPBF
IRF7416 Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN Infineon Technologies AG IRF7416TR vs IRF7416
IRF7416TRPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7416TR vs IRF7416TRPBF
Part Number Description Manufacturer Compare
IRF7416 Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN Infineon Technologies AG IRF7416TR vs IRF7416
IRF7416TRPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7416TR vs IRF7416TRPBF
IRF7416GPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7416TR vs IRF7416GPBF
FSS134 Power Field-Effect Transistor, 9A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd IRF7416TR vs FSS134
IRF7416TR Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7416TR vs IRF7416TR

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