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Transistors Power Field-Effect Transistors IRF7832PBF

Transistors
IRF7832PBF
Description: Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Overview of IRF7832PBF by International Rectifier

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Price & Stock for IRF7832PBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   354
RFQ
Bristol Electronics   190
RFQ
Bristol Electronics   132
RFQ
Quest Components MOSFET Transistor, N-Channel, SO 184
  • 1 $1.3875
  • 19 $0.8325
  • 73 $0.6938
$0.6938 / $1.3875 Buy Now
Quest Components MOSFET Transistor, N-Channel, SO 28
  • 1 $2.1000
  • 3 $1.6800
  • 13 $1.0500
$1.0500 / $2.1000 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant Stock EU - 256
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

CAD Models for IRF7832PBF by International Rectifier
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Part Data Attributes for IRF7832PBF by International Rectifier
Parametric Data

IRF7832PBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOIC
Package Description
LEAD FREE, SO-8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
260 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.004 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
155 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
160 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF7832PBF
    International Rectifier
    Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
    VS

Alternate Parts for IRF7832PBF

This table gives cross-reference parts and alternative options found for IRF7832PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7832PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7832TRPBF Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7832PBF vs IRF7832TRPBF
Part Number Description Manufacturer Compare
IRF7862PBF Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 Infineon Technologies AG IRF7832PBF vs IRF7862PBF
IRF7862PBF Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 International Rectifier IRF7832PBF vs IRF7862PBF
IRF7862TRPBF Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET Infineon Technologies AG IRF7832PBF vs IRF7862TRPBF
IRF7832 Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7832PBF vs IRF7832
IRF7832TRPBF Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7832PBF vs IRF7832TRPBF
IRF7832TR Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7832PBF vs IRF7832TR
IRF7832PBF Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7832PBF vs IRF7832PBF
IRF7832TR Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7832PBF vs IRF7832TR

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