Part Details for IRF7832TRPBF-1 by Infineon Technologies AG
Results Overview of IRF7832TRPBF-1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF7832TRPBF-1 Information
IRF7832TRPBF-1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7832TRPBF-1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF7832TRPBF-1
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Avnet Americas | - Bulk (Alt: IRF7832TRPBF-1) COO: Thailand RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk | 0 |
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RFQ | |
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Rochester Electronics | IRF7832TRPBF - Synchronous MOSFET HEXFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 3881 |
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$0.5196 / $0.8381 | Buy Now |
US Tariff Estimator: IRF7832TRPBF-1 by Infineon Technologies AG
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for IRF7832TRPBF-1
IRF7832TRPBF-1 Part Data Attributes
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IRF7832TRPBF-1
Infineon Technologies AG
Buy Now
Datasheet
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IRF7832TRPBF-1
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Small Outline, R-Pdso-G8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 260 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 450 Pf | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 155 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
IRF7832TRPBF-1 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IRF7832TRPBF-1 is a standard SO-8 package with a minimum pad size of 1.5mm x 1.5mm and a maximum pad size of 2.5mm x 2.5mm. It's recommended to follow the land pattern recommended by Infineon in their application note AN2013-01.
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To ensure proper thermal management, it's recommended to provide a thermal pad on the PCB underneath the device, and to use a thermal interface material (TIM) such as thermal tape or thermal grease to improve heat transfer. Additionally, ensure good airflow around the device and avoid blocking the airflow with nearby components.
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The maximum allowed voltage on the gate pin of the IRF7832TRPBF-1 is ±20V, but it's recommended to limit the voltage to ±15V to ensure reliable operation and to prevent damage to the device.
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Yes, the IRF7832TRPBF-1 is suitable for high-frequency switching applications up to 1MHz, but it's recommended to follow the guidelines in the datasheet and application notes for proper layout, decoupling, and gate drive design to minimize switching losses and ensure reliable operation.
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To protect the IRF7832TRPBF-1 from ESD, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and to ensure that the device is stored in an ESD-safe environment. Additionally, it's recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the PCB.