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Small Signal Field-Effect Transistor, 1-Element, Silicon, MS-012AA, LEAD FREE, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF7842PBF-ND
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DigiKey | MOSFET N-CH 40V 18A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
|
Buy Now | |
DISTI #
1436945
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element14 Asia-Pacific | MOSFET, N, 40V, SO-8 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.6945 / $1.5449 | Buy Now |
DISTI #
1436945
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Farnell | MOSFET, N, 40V, SO-8 RoHS: Compliant Min Qty: 5 Lead time: 11 Weeks, 1 Days Container: Each | 0 |
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$0.5489 / $0.6845 | Buy Now |
|
Win Source Electronics | HEXFET Power MOSFET | MOSFET N-CH 40V 18A 8-SOIC | 121500 |
|
$0.5660 / $0.8480 | Buy Now |
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IRF7842PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7842PBF
Infineon Technologies AG
Small Signal Field-Effect Transistor, 1-Element, Silicon, MS-012AA, LEAD FREE, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.005 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 310 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7842PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7842PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDS8840NZ | N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ, 2500-REEL | onsemi | IRF7842PBF vs FDS8840NZ |
IRF7842 | Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7842PBF vs IRF7842 |