Datasheets
IRF7842PBF by:

Small Signal Field-Effect Transistor, 1-Element, Silicon, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7842PBF by Infineon Technologies AG

Overview of IRF7842PBF by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for IRF7842PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7842PBF-ND
DigiKey MOSFET N-CH 40V 18A 8SO Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # 1436945
element14 Asia-Pacific MOSFET, N, 40V, SO-8 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $1.5449
  • 10 $1.2801
  • 100 $1.0373
  • 500 $0.8902
  • 1,000 $0.7430
  • 5,000 $0.6945
$0.6945 / $1.5449 Buy Now
DISTI # 1436945
Farnell MOSFET, N, 40V, SO-8 RoHS: Compliant Min Qty: 5 Lead time: 11 Weeks, 1 Days Container: Each 0
  • 5 $0.6845
  • 25 $0.5539
  • 100 $0.5526
  • 250 $0.5514
  • 500 $0.5501
  • 1,000 $0.5489
$0.5489 / $0.6845 Buy Now
Win Source Electronics HEXFET Power MOSFET | MOSFET N-CH 40V 18A 8-SOIC 121500
  • 60 $0.8480
  • 145 $0.6960
  • 225 $0.6740
  • 310 $0.6530
  • 400 $0.6310
  • 535 $0.5660
$0.5660 / $0.8480 Buy Now

Part Details for IRF7842PBF

IRF7842PBF CAD Models

IRF7842PBF Part Data Attributes

IRF7842PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7842PBF Infineon Technologies AG Small Signal Field-Effect Transistor, 1-Element, Silicon, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 50 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.005 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 310 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7842PBF

This table gives cross-reference parts and alternative options found for IRF7842PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7842PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS8840NZ N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ, 2500-REEL onsemi IRF7842PBF vs FDS8840NZ
IRF7842 Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7842PBF vs IRF7842
Part Number Description Manufacturer Compare
IRF7842 Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7842PBF vs IRF7842
FDS8840NZ N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ, 2500-REEL onsemi IRF7842PBF vs FDS8840NZ

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