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Part Details for IRF8010STRLPBF by Infineon Technologies AG
Results Overview of IRF8010STRLPBF by Infineon Technologies AG
- Distributor Offerings: (30 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF8010STRLPBF Information
IRF8010STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF8010STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF8010STRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 80A D2PAK Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1217 In Stock |
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$1.0284 / $3.2700 | Buy Now |
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DISTI #
IRF8010STRLPBF
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Avnet Americas | Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRF8010STRLPBF) COO: China RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Tape & Reel | 25600 |
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$0.8056 | Buy Now |
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DISTI #
942-IRF8010STRLPBF
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Mouser Electronics | MOSFETs MOSFT 100V 80A 15mOhm 81nC RoHS: Compliant | 937 |
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$1.0200 / $2.0700 | Buy Now |
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DISTI #
E02:0323_00176343
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Arrow Electronics | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R COO: China RoHS: Exempt Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks Date Code: 2536 | Europe - 1600 |
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$1.0410 | Buy Now |
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DISTI #
V72:2272_13890567
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Arrow Electronics | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R COO: United States RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2236 Container: Cut Strips | Americas - 6 |
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$0.8957 | Buy Now |
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DISTI #
70019655
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RS | MOSFET, 100V, 80A, 15 MOHM, 81 NC QG, D2-PAK Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$4.0400 / $5.0500 | RFQ |
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Future Electronics | Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks Container: Reel | 20800Reel |
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$1.0600 / $1.0900 | Buy Now |
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Future Electronics | Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks Container: Reel | 0Reel |
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$1.0600 / $1.0900 | Buy Now |
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DISTI #
91913808
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Verical | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Exempt Min Qty: 800 Package Multiple: 800 Date Code: 2536 | Americas - 10400 |
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$1.0807 / $1.3477 | Buy Now |
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DISTI #
92021733
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Verical | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Exempt Min Qty: 800 Package Multiple: 800 Date Code: 2536 | Americas - 1600 |
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$1.3474 | Buy Now |
Part Details for IRF8010STRLPBF
IRF8010STRLPBF CAD Models
IRF8010STRLPBF Part Data Attributes
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IRF8010STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8010STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | D2pak-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Avalanche Energy Rating (Eas) | 310 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 59 Pf | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 260 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRF8010STRLPBF
This table gives cross-reference parts and alternative options found for IRF8010STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8010STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF8010SPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF8010STRLPBF vs IRF8010SPBF |
| IRF8010SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF8010STRLPBF vs IRF8010SPBF |
| IRF8010S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF8010STRLPBF vs IRF8010S |
| IRF8010STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF8010STRLPBF vs IRF8010STRLPBF |
IRF8010STRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF8010STRLPBF is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF8010STRLPBF is between 10V and 15V, with a maximum voltage of 20V.
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To protect the IRF8010STRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
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The maximum allowable current for the IRF8010STRLPBF is 80A, but this value may vary depending on the specific application and operating conditions.