Part Details for IRF840ASTRL by International Rectifier
Overview of IRF840ASTRL by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF840ASTRL
IRF840ASTRL CAD Models
IRF840ASTRL Part Data Attributes
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IRF840ASTRL
International Rectifier
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Datasheet
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IRF840ASTRL
International Rectifier
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 510 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 225 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.1 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF840ASTRL
This table gives cross-reference parts and alternative options found for IRF840ASTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840ASTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF840ASPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 | Vishay Intertechnologies | IRF840ASTRL vs IRF840ASPBF |
IRF840ASTRLPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 | Vishay Intertechnologies | IRF840ASTRL vs IRF840ASTRLPBF |
IRF840ASTRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF840ASTRL vs IRF840ASTRRPBF |
IRF840ASTRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 | Vishay Intertechnologies | IRF840ASTRL vs IRF840ASTRRPBF |
IRF840ASPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF840ASTRL vs IRF840ASPBF |
SIHF840ASTR | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF840ASTRL vs SIHF840ASTR |
SIHF840AS-GE3 | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF840ASTRL vs SIHF840AS-GE3 |
IRF840ASPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF840ASTRL vs IRF840ASPBF |
IRF840AS | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRF840ASTRL vs IRF840AS |
IRF840ASTRR | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRF840ASTRL vs IRF840ASTRR |