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Transistors Power Field-Effect Transistors IRF840STRRPBF

IRF840STRRPBF
Description: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Overview of IRF840STRRPBF by International Rectifier

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Part Data Attributes for IRF840STRRPBF by International Rectifier
Parametric Data

IRF840STRRPBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
510 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
8 A
Drain-source On Resistance-Max
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
32 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF840STRRPBF
    International Rectifier
    Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
    VS

Alternate Parts for IRF840STRRPBF

This table gives cross-reference parts and alternative options found for IRF840STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF840STRLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRF840STRRPBF vs IRF840STRLPBF
IRF840S Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF840STRRPBF vs IRF840S
IRF840S 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF840STRRPBF vs IRF840S
IRF840STRL Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF840STRRPBF vs IRF840STRL
IRF840STRR Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF840STRRPBF vs IRF840STRR
IRF840SPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRF840STRRPBF vs IRF840SPBF
IRF840S Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF840STRRPBF vs IRF840S
SIHF840STRL-GE3 TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF840STRRPBF vs SIHF840STRL-GE3
IRF840SPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840STRRPBF vs IRF840SPBF
IRF840S Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF840STRRPBF vs IRF840S
Part Number Description Manufacturer Compare
2SK1541(S)TL 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET Renesas Electronics Corporation IRF840STRRPBF vs 2SK1541(S)TL
2SK1864 TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRF840STRRPBF vs 2SK1864
2SK1315(S)TL 8A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET Renesas Electronics Corporation IRF840STRRPBF vs 2SK1315(S)TL
FS10VS-10 Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors IRF840STRRPBF vs FS10VS-10
2SK1540(S)TL Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd IRF840STRRPBF vs 2SK1540(S)TL
2SK1540(S)TR 7A, 450V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET Renesas Electronics Corporation IRF840STRRPBF vs 2SK1540(S)TR
IRF840ASTRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840STRRPBF vs IRF840ASTRRPBF
IRF840STRLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF840STRRPBF vs IRF840STRLPBF
2SK1540(S) Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3/2 Hitachi Ltd IRF840STRRPBF vs 2SK1540(S)
2SK1540S 7A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation IRF840STRRPBF vs 2SK1540S

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