Datasheets
IRF9240EC by:

Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

Part Details for IRF9240EC by Infineon Technologies AG

Overview of IRF9240EC by Infineon Technologies AG

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Part Details for IRF9240EC

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IRF9240EC Part Data Attributes

IRF9240EC Infineon Technologies AG
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IRF9240EC Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.58 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Reference Standard CECC
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9240EC

This table gives cross-reference parts and alternative options found for IRF9240EC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9240EC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9240ECPBF 11A, 200V, 0.58ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA Infineon Technologies AG IRF9240EC vs IRF9240ECPBF
Part Number Description Manufacturer Compare
IRF9230 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF9240EC vs IRF9230
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9240EC vs IRF9232
IRF9240SMD-JQR-B Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors IRF9240EC vs IRF9240SMD-JQR-B
IRF9240ED Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF9240EC vs IRF9240ED
IRF9240 11A, 200V, 0.58ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF9240EC vs IRF9240
MTM8P20 Power Field-Effect Transistor, 8A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF9240EC vs MTM8P20
IRF9240PBF Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF9240EC vs IRF9240PBF
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9240EC vs IRF9232
2N6806PBF Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9240EC vs 2N6806PBF
RFM5P12 Power Field-Effect Transistor, 5A I(D), 120V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9240EC vs RFM5P12

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