Part Details for IRF9510 by Rochester Electronics LLC
Overview of IRF9510 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF9510
IRF9510 CAD Models
IRF9510 Part Data Attributes
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IRF9510
Rochester Electronics LLC
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Datasheet
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IRF9510
Rochester Electronics LLC
3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | NOT SPECIFIED | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9510
This table gives cross-reference parts and alternative options found for IRF9510. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9510PBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF9510 vs IRF9510PBF |
IRF9510 | Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF9510 vs IRF9510 |
IRF9510PBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF9510 vs IRF9510PBF |
IRF9510 | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF9510 vs IRF9510 |
IRF9510 | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF9510 vs IRF9510 |
IRF9510PBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF9510 vs IRF9510PBF |