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Transistors Power Field-Effect Transistors IRF9510STRL

Transistors
IRF9510STRL
Description: Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Overview of IRF9510STRL by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF9510STRL by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # IRF9510STRL
Avnet Americas MOSFET P-CHANNEL 100V - Tape and Reel (Alt: IRF9510STRL) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ

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Part Data Attributes for IRF9510STRL by Vishay Intertechnologies
Parametric Data

IRF9510STRL
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Part Package Code
D2PAK
Package Description
TO-263, 3 PIN
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
200 mJ
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
4 A
Drain-source On Resistance-Max
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
43 W
Pulsed Drain Current-Max (IDM)
16 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF9510STRL
    Vishay Intertechnologies
    Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
    VS

Alternate Parts for IRF9510STRL

This table gives cross-reference parts and alternative options found for IRF9510STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF9510SPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9510STRL vs IRF9510SPBF
IRF9510STRLPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9510STRL vs IRF9510STRLPBF
IRF9510SPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9510STRL vs IRF9510SPBF
IRF9510STRLPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9510STRL vs IRF9510STRLPBF
IRF9510STRL Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9510STRL vs IRF9510STRL
Part Number Description Manufacturer Compare
IRF9510STRLPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9510STRL vs IRF9510STRLPBF
IRF9510STRL Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9510STRL vs IRF9510STRL
IRF9510SPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9510STRL vs IRF9510SPBF
FQD5P10 Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRF9510STRL vs FQD5P10
IRF9510SPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9510STRL vs IRF9510SPBF
FQD5P10 Power Field-Effect Transistor onsemi IRF9510STRL vs FQD5P10
IRF9510STRLPBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9510STRL vs IRF9510STRLPBF
FQD5P10TM Power MOSFET, P-Channel, QFET®, -100 V, -3.6 A, 1.05 Ω, DPAK, 2500-REEL onsemi IRF9510STRL vs FQD5P10TM

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