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Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05W6874
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Newark | Mosfet, P Ch, -100V, -4A, To-263-3, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRF9510STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.2300 | Buy Now |
DISTI #
58K5793
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Newark | P Channel Mosfet, -100V, 4A, D2-Pak, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF9510STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8440 / $1.1400 | Buy Now |
DISTI #
81AC8883
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Newark | Mosfet P-Channel 100V Rohs Compliant: No |Vishay IRF9510STRLPBF RoHS: Not Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8440 / $1.1400 | Buy Now |
DISTI #
IRF9510STRLPBF
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Avnet Americas | MOSFET P-CHANNEL 100V - Tape and Reel (Alt: IRF9510STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.8089 | Buy Now |
DISTI #
844-IRF9510STRLPBF
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Mouser Electronics | MOSFETs P-Chan 100V 4.0 Amp RoHS: Compliant | 964 |
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$0.7760 / $1.1200 | Buy Now |
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Future Electronics | Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$0.6250 / $0.6750 | Buy Now |
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Future Electronics | Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.6250 / $0.6750 | Buy Now |
DISTI #
82775886
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Verical | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2413 | Americas - 800 |
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$0.5933 / $0.5951 | Buy Now |
DISTI #
61254752
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Verical | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2147 | Americas - 246 |
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$0.8451 / $0.8882 | Buy Now |
DISTI #
66385809
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Verical | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) D2PAK T/R Min Qty: 33 Package Multiple: 1 Date Code: 2221 | Americas - 200 |
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$0.9350 / $0.9513 | Buy Now |
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IRF9510STRLPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF9510STRLPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 43 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF9510STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF9510SPBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | IRF9510STRLPBF vs IRF9510SPBF |
IRF9510STRLPBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF9510STRLPBF vs IRF9510STRLPBF |
IRF9510SPBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF9510STRLPBF vs IRF9510SPBF |
IRF9510STRL | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | IRF9510STRLPBF vs IRF9510STRL |
IRF9510STRL | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF9510STRLPBF vs IRF9510STRL |