Part Details for IRF9520 by International Rectifier
Overview of IRF9520 by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9520
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 300 |
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RFQ | ||
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Bristol Electronics | 210 |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 168 |
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$3.7555 / $6.0900 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 41 |
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$2.1120 / $3.8400 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 12 |
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$1.9000 / $2.3750 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 12 |
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$1.9350 / $3.0960 | Buy Now |
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Chip 1 Exchange | INSTOCK | 40 |
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RFQ |
Part Details for IRF9520
IRF9520 CAD Models
IRF9520 Part Data Attributes
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IRF9520
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF9520
International Rectifier
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 6.8 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 60 W | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 27 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9520
This table gives cross-reference parts and alternative options found for IRF9520. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9520, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9521 | Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF9520 vs IRF9521 |
IRF9520 | 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9520 vs IRF9520 |
IRF9521-006 | Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF9520 vs IRF9521-006 |
RFP6P10 | 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9520 vs RFP6P10 |
RFP6P10 | Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF9520 vs RFP6P10 |
IRF9521 | Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF9520 vs IRF9521 |
IRF9521-010 | Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF9520 vs IRF9521-010 |
IRF9521-001 | Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF9520 vs IRF9521-001 |
IRF9521 | Power Field-Effect Transistor, 6A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF9520 vs IRF9521 |
RFP6P08 | 6A, 80V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF9520 vs RFP6P08 |