There are no models available for this part yet.
Overview of IRF9532 by Rochester Electronics LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 7 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 7 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF9532 by Rochester Electronics LLC
Part Data Attributes for IRF9532 by Rochester Electronics LLC
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
ROCHESTER ELECTRONICS LLC
|
Reach Compliance Code
|
unknown
|
Avalanche Energy Rating (Eas)
|
500 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
10 A
|
Drain-source On Resistance-Max
|
0.4 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Moisture Sensitivity Level
|
NOT SPECIFIED
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
Qualification Status
|
COMMERCIAL
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRF9532
This table gives cross-reference parts and alternative options found for IRF9532. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9532, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
RFP8P10 | Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF9532 vs RFP8P10 |
MTP8P08 | Power Field-Effect Transistor, 8A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF9532 vs MTP8P08 |
IRF9532 | Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF9532 vs IRF9532 |
RFP8P10 | 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9532 vs RFP8P10 |
MTP8P08 | 8A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF9532 vs MTP8P08 |
IRF9532 | 10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9532 vs IRF9532 |
IRF9532 | Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF9532 vs IRF9532 |