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Transistors Power Field-Effect Transistors IRF9640STRLPBF

Transistors
IRF9640STRLPBF
Description: Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Overview of IRF9640STRLPBF by Vishay Siliconix

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Price & Stock for IRF9640STRLPBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRF9640STRLPBFCT-ND
DigiKey MOSFET P-CH 200V 11A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4165
In Stock
  • 1 $3.1400
  • 10 $2.0430
  • 100 $1.4156
  • 800 $1.0865
  • 1,600 $1.0095
  • 2,400 $0.9702
  • 4,000 $0.9685
$0.9685 / $3.1400 Buy Now
DISTI # 70615657
RS IRF9640STRLPBF P-channel MOSFET Transistor, 6.8 A, 200 V, 3-Pin D2PAK | Siliconix / Vishay IRF9640STRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $2.1500
  • 100 $2.0300
  • 500 $1.9200
  • 1,000 $1.8200
$1.8200 / $2.1500 RFQ
New Advantage Corporation Single P-Channel 200 V 0.5 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant Min Qty: 1 Package Multiple: 800 16800
  • 800 $0.9786
  • 16,800 $0.9133
$0.9133 / $0.9786 Buy Now

CAD Models for IRF9640STRLPBF by Vishay Siliconix
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Part Data Attributes for IRF9640STRLPBF by Vishay Siliconix
Parametric Data

IRF9640STRLPBF
Vishay Siliconix
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
D2PAK
Package Description
ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
700 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
44 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF9640STRLPBF
    Vishay Siliconix
    Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
    VS

Alternate Parts for IRF9640STRLPBF

This table gives cross-reference parts and alternative options found for IRF9640STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9640STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9640STRLPBF vs IRF9640STRLPBF
SIHF9640S-GE3 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRF9640STRLPBF vs SIHF9640S-GE3
SIHF9640S-GE3 TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF9640STRLPBF vs SIHF9640S-GE3
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9640STRLPBF vs IRF9640STRRPBF
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9640STRLPBF vs IRF9640STRRPBF
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies IRF9640STRLPBF vs IRF9640S
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9640STRLPBF vs IRF9640STRRPBF
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9640STRLPBF vs IRF9640S
IRF9640SPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN International Rectifier IRF9640STRLPBF vs IRF9640SPBF
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9640STRLPBF vs IRF9640S
Part Number Description Manufacturer Compare
IRF9640STRR Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9640STRLPBF vs IRF9640STRR
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9640STRLPBF vs IRF9640STRLPBF
IRF9640SPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN International Rectifier IRF9640STRLPBF vs IRF9640SPBF
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9640STRLPBF vs IRF9640S
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9640STRLPBF vs IRF9640STRLPBF
SIHF9640S-GE3 TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF9640STRLPBF vs SIHF9640S-GE3
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF9640STRLPBF vs IRF9640STRRPBF
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies IRF9640STRLPBF vs IRF9640S
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9640STRLPBF vs IRF9640S
SIHF9640S-GE3 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRF9640STRLPBF vs SIHF9640S-GE3

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