Part Details for IRF9Z34NSTRRPBF by Infineon Technologies AG
Overview of IRF9Z34NSTRRPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9Z34NSTRRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9Z34NSTRRPBF
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Avnet Americas | Trans MOSFET P-CH 55V 19A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF9Z34NSTRRPBF) RoHS: Compliant Min Qty: 643 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 124000 Partner Stock |
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$0.4945 / $0.5568 | Buy Now |
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Bristol Electronics | 3469 |
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RFQ | ||
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Rochester Electronics | IRF9Z34 - 20V-250V P-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 124000 |
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$0.4827 / $0.5679 | Buy Now |
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Win Source Electronics | MOSFET P-CH 55V 19A D2PAK | 92797 |
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$0.4870 / $0.7300 | Buy Now |
Part Details for IRF9Z34NSTRRPBF
IRF9Z34NSTRRPBF CAD Models
IRF9Z34NSTRRPBF Part Data Attributes
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IRF9Z34NSTRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9Z34NSTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Date Of Intro | 1997-08-25 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9Z34NSTRRPBF
This table gives cross-reference parts and alternative options found for IRF9Z34NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9Z34NSPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRRPBF vs IRF9Z34NSPBF |
IRF9Z34NSTRR | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRRPBF vs IRF9Z34NSTRR |
IRF9Z34NS | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRRPBF vs IRF9Z34NS |
IRF9Z34NSTRLPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRRPBF vs IRF9Z34NSTRLPBF |
IRF9Z34NSPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF9Z34NSTRRPBF vs IRF9Z34NSPBF |
IRF9Z34NSTRRPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRRPBF vs IRF9Z34NSTRRPBF |