There are no models available for this part yet.
Overview of IRF9Z34SPBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF9Z34SPBF by International Rectifier
Part # | Manufacturer | Description | Stock | Price | Buy | ||
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant |
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RFQ |
CAD Models for IRF9Z34SPBF by International Rectifier
Part Data Attributes for IRF9Z34SPBF by International Rectifier
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---|---|
Pbfree Code
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Yes
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Rohs Code
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Yes
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Part Package Code
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D2PAK
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Package Description
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TO-263, 3 PIN
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Pin Count
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4
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Avalanche Energy Rating (Eas)
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370 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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60 V
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Drain Current-Max (ID)
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18 A
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Drain-source On Resistance-Max
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0.14 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-263AB
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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P-CHANNEL
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Power Dissipation Ambient-Max
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88 W
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Power Dissipation-Max (Abs)
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88 W
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Pulsed Drain Current-Max (IDM)
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72 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN OVER NICKEL
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRF9Z34SPBF
This table gives cross-reference parts and alternative options found for IRF9Z34SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF9Z34STRRPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF9Z34SPBF vs IRF9Z34STRRPBF |
IRF9Z34STRR | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF9Z34SPBF vs IRF9Z34STRR |
IRF9Z34STRLPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF9Z34SPBF vs IRF9Z34STRLPBF |
IRF9Z34STRLPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9Z34SPBF vs IRF9Z34STRLPBF |
SIHF9Z34STRL-GE3 | TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF9Z34SPBF vs SIHF9Z34STRL-GE3 |
SIHF9Z34STRL-GE3 | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9Z34SPBF vs SIHF9Z34STRL-GE3 |
IRF9Z34SPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9Z34SPBF vs IRF9Z34SPBF |
IRF9Z34S | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF9Z34SPBF vs IRF9Z34S |
IRF9Z34STRRPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9Z34SPBF vs IRF9Z34STRRPBF |
IRF9Z34S | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF9Z34SPBF vs IRF9Z34S |
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