Part Details for IRF9Z34STRRPBF by Vishay Intertechnologies
Overview of IRF9Z34STRRPBF by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9Z34STRRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9Z34STRRPBF
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Avnet Americas | MOSFET P-CHANNEL 60V - Tape and Reel (Alt: IRF9Z34STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.9379 | Buy Now |
DISTI #
844-IRF9Z34STRRPBF
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Mouser Electronics | MOSFETs TO263 P CHAN 60V RoHS: Compliant | 177 |
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$1.4500 / $2.6000 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 | 0 |
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$1.0800 | Buy Now |
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Bristol Electronics | 464 |
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RFQ | ||
DISTI #
IRF9Z34STRRPBF
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TTI | MOSFETs TO263 P CHAN 60V RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$1.1400 / $1.1600 | Buy Now |
DISTI #
IRF9Z34STRRPBF
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EBV Elektronik | Trans MOSFET P-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF9Z34STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF9Z34STRRPBF
IRF9Z34STRRPBF CAD Models
IRF9Z34STRRPBF Part Data Attributes
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IRF9Z34STRRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF9Z34STRRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 370 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 88 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9Z34STRRPBF
This table gives cross-reference parts and alternative options found for IRF9Z34STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9Z34STRRPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF9Z34STRRPBF vs IRF9Z34STRRPBF |
IRF9Z34STRR | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF9Z34STRRPBF vs IRF9Z34STRR |
IRF9Z34STRLPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF9Z34STRRPBF vs IRF9Z34STRLPBF |
IRF9Z34STRLPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9Z34STRRPBF vs IRF9Z34STRLPBF |
SIHF9Z34STRL-GE3 | TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF9Z34STRRPBF vs SIHF9Z34STRL-GE3 |
IRF9Z34SPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF9Z34STRRPBF vs IRF9Z34SPBF |
SIHF9Z34STRL-GE3 | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9Z34STRRPBF vs SIHF9Z34STRL-GE3 |
IRF9Z34SPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9Z34STRRPBF vs IRF9Z34SPBF |
IRF9Z34S | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF9Z34STRRPBF vs IRF9Z34S |
IRF9Z34S | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF9Z34STRRPBF vs IRF9Z34S |