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Transistors Power Field-Effect Transistors IRFB3307ZPBF

IRFB3307ZPBF
Description: Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRFB3307ZPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFB3307ZPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 61M6829
Newark Mosfet, N-Ch, 75V, 120A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:120A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFB3307ZPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 444
  • 1 $2.3400
  • 10 $1.9800
  • 100 $1.6400
  • 500 $1.3900
  • 1,000 $1.1600
  • 2,500 $1.1500
  • 5,000 $1.0800
$1.0800 / $2.3400 Buy Now
DISTI # IRFB3307ZPBF-ND
DigiKey MOSFET N-CH 75V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 1134
In Stock
  • 1 $3.1100
  • 50 $1.6226
  • 100 $1.4038
  • 500 $1.1955
  • 1,000 $1.0533
  • 2,000 $1.0076
$1.0076 / $3.1100 Buy Now
DISTI # IRFB3307ZPBF
Avnet Americas Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3307ZPBF) RoHS: Compliant Min Qty: 311 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 11091 Partner Stock
  • 311 $1.1527
  • 320 $1.1366
  • 630 $1.1285
  • 1,600 $1.0963
  • 3,200 $1.0721
  • 16,000 $1.0399
  • 32,000 $1.0237
$1.0237 / $1.1527 Buy Now
DISTI # IRFB3307ZPBF
Avnet Americas Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3307ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.7641
$0.7641 Buy Now
DISTI # 942-IRFB3307ZPBF
Mouser Electronics MOSFETs MOSFT 75V 120A 5.8mOhm 79nC Qg RoHS: Compliant 1446
  • 1 $2.6100
  • 10 $1.9800
  • 100 $1.4200
  • 500 $1.1600
  • 1,000 $1.0600
  • 2,000 $1.0000
$1.0000 / $2.6100 Buy Now
Future Electronics Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Container: Tube 8
Tube
  • 1 $1.2400
  • 40 $1.1800
  • 150 $1.1300
  • 500 $1.0900
  • 2,000 $0.9900
$0.9900 / $1.2400 Buy Now
Future Electronics Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube 0
Tube
  • 50 $1.1700
  • 200 $1.1200
  • 750 $1.0700
  • 1,500 $1.0500
  • 3,750 $0.9900
$0.9900 / $1.1700 Buy Now
Quest Components   800
  • 1 $3.4830
  • 109 $2.1479
  • 467 $1.9157
$1.9157 / $3.4830 Buy Now
Rochester Electronics IRFB3307 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 751
  • 1 $1.1800
  • 25 $1.1500
  • 100 $1.1100
  • 500 $1.0600
  • 1,000 $0.9993
$0.9993 / $1.1800 Buy Now
DISTI # IRFB3307ZPBF
TME Transistor: N-MOSFET, unipolar, 75V, 120A, 230W, TO220AB Min Qty: 1 128
  • 1 $2.2100
  • 10 $1.9200
  • 50 $1.6700
  • 100 $1.5600
  • 250 $1.4200
  • 500 $1.3100
  • 1,000 $1.1900
  • 2,000 $1.0800
$1.0800 / $2.2100 Buy Now
DISTI # C1S322000488410
Chip1Stop Trans MOSFET N-CH Si 75V 120A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant 6017
  • 1 $4.6400
  • 10 $1.4600
  • 25 $1.3200
  • 100 $1.1100
  • 250 $0.8030
  • 1,000 $0.7210
  • 2,500 $0.7140
  • 5,000 $0.7040
$0.7040 / $4.6400 Buy Now
DISTI # C1S327400134512
Chip1Stop Trans MOSFET N-CH Si 75V 120A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 4178
  • 1 $1.5200
  • 10 $1.2300
  • 50 $1.0200
  • 100 $0.9780
  • 200 $0.9710
  • 1,000 $0.8200
  • 2,000 $0.8050
  • 4,000 $0.7840
$0.7840 / $1.5200 Buy Now
DISTI # C1S322000812413
Chip1Stop MOSFET RoHS: Compliant 144
  • 1 $2.4455
  • 10 $1.8905
  • 100 $1.3689
$1.3689 / $2.4455 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 1000
  • 1 $3.2720
  • 10 $1.7100
  • 30 $1.3320
  • 50 $1.2560
  • 100 $1.1990
  • 300 $1.1610
$1.1610 / $3.2720 Buy Now
DISTI # SP001564038
EBV Elektronik Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB (Alt: SP001564038) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 16000
Buy Now
LCSC 75V 120A 5.8m10V75A 230W 4V150uA 1 N-Channel TO-220AB MOSFETs ROHS 434
  • 1 $1.0466
  • 10 $0.8727
  • 50 $0.7778
  • 100 $0.6703
  • 500 $0.6229
  • 1,000 $0.6008
$0.6008 / $1.0466 Buy Now
New Advantage Corporation Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 9600
  • 200 $0.8000
  • 9,600 $0.7467
$0.7467 / $0.8000 Buy Now
Win Source Electronics MOSFET N-CH 75V 120A TO-220AB 259981
  • 50 $1.0740
  • 115 $0.8820
  • 180 $0.8540
  • 245 $0.8270
  • 315 $0.7990
  • 420 $0.7160
$0.7160 / $1.0740 Buy Now

CAD Models for IRFB3307ZPBF by Infineon Technologies AG
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Part Data Attributes for IRFB3307ZPBF by Infineon Technologies AG
Parametric Data

IRFB3307ZPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
140 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
75 V
Drain Current-Max (ID)
120 A
Drain-source On Resistance-Max
0.0058 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
Pulsed Drain Current-Max (IDM)
480 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFB3307ZPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRFB3307ZPBF

This table gives cross-reference parts and alternative options found for IRFB3307ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3307ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFB3307ZGPBF Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB3307ZPBF vs IRFB3307ZGPBF
Part Number Description Manufacturer Compare
IRFB3307ZGPBF Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB3307ZPBF vs IRFB3307ZGPBF
IRFS3307ZTRLPBF Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFB3307ZPBF vs IRFS3307ZTRLPBF
IRFS3307ZTRRPBF Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 International Rectifier IRFB3307ZPBF vs IRFS3307ZTRRPBF
STP155N75F4 120A, 75V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics IRFB3307ZPBF vs STP155N75F4
IRFS3307ZTRRPBF Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFB3307ZPBF vs IRFS3307ZTRRPBF
IRFS3307ZPBF Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFB3307ZPBF vs IRFS3307ZPBF

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