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Transistors / Power Field-Effect Transistors / IRFB4310PBF
Datasheets
IRFB4310PBF by:

Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRFB4310PBF by Infineon Technologies AG

Overview of IRFB4310PBF by Infineon Technologies AG

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Price & Stock for IRFB4310PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFB4310PBF-ND
DigiKey MOSFET N-CH 100V 130A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 2591
In Stock
  • 1 $3.7100
  • 50 $1.8832
  • 100 $1.7059
  • 500 $1.3948
  • 1,000 $1.2946
  • 2,000 $1.2811
$1.2811 / $3.7100 Buy Now
DISTI # IRFB4310PBF
Avnet Americas Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4310PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 58 Partner Stock
RFQ
DISTI # IRFB4310PBF
Avnet Americas Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4310PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 50 $0.7546
$0.7546 Buy Now
DISTI # 942-IRFB4310PBF
Mouser Electronics MOSFETs MOSFT 100V 140A 7mOhm 170nC RoHS: Compliant 2831
  • 1 $3.1400
  • 10 $2.4600
  • 25 $2.3200
  • 100 $1.7300
  • 250 $1.5300
  • 500 $1.3900
  • 1,000 $1.2800
$1.2800 / $3.1400 Buy Now
Future Electronics Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube 5200
Tube
  • 50 $1.3900
  • 200 $1.3500
  • 750 $1.3200
  • 1,250 $1.3000
  • 2,500 $1.2600
$1.2600 / $1.3900 Buy Now
Future Electronics Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks Container: Tube 1000
Tube
  • 50 $1.3900
  • 200 $1.3500
  • 750 $1.3200
  • 1,250 $1.3000
  • 2,500 $1.2600
$1.2600 / $1.3900 Buy Now
DISTI # 81705195
Verical Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2421 Americas - 954
  • 6 $2.2068
  • 10 $2.0332
  • 25 $1.8294
  • 100 $1.5505
  • 250 $1.0610
  • 500 $1.0106
  • 1,000 $1.0004
  • 2,000 $0.9908
$0.9908 / $2.2068 Buy Now
DISTI # 75723559
Verical Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 14 Package Multiple: 1 Date Code: 2333 Americas - 840
  • 14 $2.3875
  • 50 $2.1000
  • 100 $1.7125
$1.7125 / $2.3875 Buy Now
DISTI # 77899269
Verical Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2351 Americas - 331
  • 6 $2.6823
  • 10 $2.4139
  • 25 $2.1069
  • 100 $1.7067
  • 250 $1.0758
  • 500 $1.0235
$1.0235 / $2.6823 Buy Now
DISTI # IRFB4310PBF
TME Transistor: N-MOSFET, unipolar, 100V, 140A, 330W, TO220AB Min Qty: 1 0
  • 1 $2.6300
  • 25 $2.0300
  • 50 $1.9100
  • 100 $1.7900
  • 250 $1.6400
  • 500 $1.5200
  • 1,000 $1.4000
  • 2,000 $1.3900
$1.3900 / $2.6300 RFQ
DISTI # C1S322000488748
Chip1Stop MOSFET RoHS: Compliant 955
  • 1 $3.0100
  • 10 $2.0700
  • 50 $1.7400
  • 100 $1.2600
  • 500 $1.1300
$1.1300 / $3.0100 Buy Now
DISTI # C1S322000511532
Chip1Stop MOSFET RoHS: Compliant Container: Tube 840
  • 1 $2.1400
  • 10 $1.9100
  • 50 $1.6800
  • 100 $1.3700
$1.3700 / $2.1400 Buy Now
DISTI # C1S322000739387
Chip1Stop MOSFET RoHS: Compliant 331
  • 1 $2.6823
  • 10 $2.4139
  • 25 $2.1069
  • 100 $1.7067
  • 250 $1.0758
$1.0758 / $2.6823 Buy Now
DISTI # SP001566592
EBV Elektronik Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB (Alt: SP001566592) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 130A 300W 7m10V75A 4V250uA 1 N-Channel ITO-220AB-3 MOSFETs ROHS 1890
  • 1 $1.7775
  • 10 $1.5679
  • 50 $1.2922
  • 100 $1.1567
  • 350 $1.0968
  • 1,050 $1.0700
$1.0700 / $1.7775 Buy Now
New Advantage Corporation Single N-Channel 100 V 7 mOhm 250 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 4950
  • 100 $1.6600
  • 4,950 $1.5500
$1.5500 / $1.6600 Buy Now

Part Details for IRFB4310PBF

IRFB4310PBF CAD Models

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IRFB4310PBF Part Data Attributes

Parametric Data
IRFB4310PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB4310PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 980 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 550 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB4310PBF

This table gives cross-reference parts and alternative options found for IRFB4310PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4310PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFB4310HR Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 International Rectifier IRFB4310PBF vs IRFB4310HR
IRFB4310 Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRFB4310PBF vs IRFB4310
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments IRFB4310PBF vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRFB4310PBF vs IPB80N06S2LH5ATMA1
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation IRFB4310PBF vs IXFH12N100F
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd IRFB4310PBF vs F10F6N
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics IRFB4310PBF vs STP9NK65Z
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics IRFB4310PBF vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation IRFB4310PBF vs NDB705BEL
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc IRFB4310PBF vs IXFH30N40Q
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRFB4310PBF vs SPB80N06S2-07
SPP80N03S2L-05 Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRFB4310PBF vs SPP80N03S2L-05

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