Datasheets
IRFB4310PBF by:

Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRFB4310PBF by International Rectifier

Overview of IRFB4310PBF by International Rectifier

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Price & Stock for IRFB4310PBF

Part # Distributor Description Stock Price Buy
Quest Components 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 7
  • 1 $3.1950
  • 4 $2.1300
$2.1300 / $3.1950 Buy Now
Rochester Electronics IRFB4310 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 75
  • 1 $1.8800
  • 25 $1.8400
  • 100 $1.7700
  • 500 $1.6900
  • 1,000 $1.6000
$1.6000 / $1.8800 Buy Now
DISTI # SMC-IRFB4310PBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 3608
RFQ
Chip 1 Exchange INSTOCK 1
RFQ

Part Details for IRFB4310PBF

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IRFB4310PBF Part Data Attributes:

IRFB4310PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFB4310PBF International Rectifier Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 980 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 550 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB4310PBF

This table gives cross-reference parts and alternative options found for IRFB4310PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4310PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFB4310 Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRFB4310PBF vs IRFB4310
Part Number Description Manufacturer Compare
IRFB4310ZPBF Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB4310PBF vs IRFB4310ZPBF
IRFB4310ZTRRPBF Power Field-Effect Transistor, 75A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFB4310PBF vs IRFB4310ZTRRPBF
IRFB4310ZTRLPBF Power Field-Effect Transistor, 75A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFB4310PBF vs IRFB4310ZTRLPBF
IPP072N10N3G 80A, 100V, 0.0072ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC IRFB4310PBF vs IPP072N10N3G

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