Part Details for IRFBC42 by Harris Semiconductor
Overview of IRFBC42 by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFBC42
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFBC42-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 314 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1000 In Stock |
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$0.9600 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 5 |
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$1.4180 / $1.5413 | Buy Now |
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Rochester Electronics | 5.4A, 600V, 1.6 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1000 |
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$0.8219 / $0.9669 | Buy Now |
Part Details for IRFBC42
IRFBC42 CAD Models
IRFBC42 Part Data Attributes
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IRFBC42
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFBC42
Harris Semiconductor
Power Field-Effect Transistor, 5.4A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | TO-220AB, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 570 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 5.4 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFBC42
This table gives cross-reference parts and alternative options found for IRFBC42. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC42, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFBC40PBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFBC42 vs IRFBC40PBF |
STP7NB60 | 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRFBC42 vs STP7NB60 |
MTP6N60E | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | IRFBC42 vs MTP6N60E |
SSP7N60 | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRFBC42 vs SSP7N60 |
IRFBC42 | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IRFBC42 vs IRFBC42 |
IRFBC40 | 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | Rochester Electronics LLC | IRFBC42 vs IRFBC40 |
IRFBC40 | 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRFBC42 vs IRFBC40 |
IRFBC42PBF | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFBC42 vs IRFBC42PBF |
MTP6N60 | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRFBC42 vs MTP6N60 |
IRFBC42 | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFBC42 vs IRFBC42 |