Datasheets
IRFBC42 by:

Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRFBC42 by International Rectifier

Overview of IRFBC42 by International Rectifier

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Part Details for IRFBC42

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IRFBC42 Part Data Attributes

IRFBC42 International Rectifier
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IRFBC42 International Rectifier Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFBC42

This table gives cross-reference parts and alternative options found for IRFBC42. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC42, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40PBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC42 vs IRFBC40PBF
STP7NB60 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFBC42 vs STP7NB60
MTP6N60E 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRFBC42 vs MTP6N60E
SSP7N60 Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRFBC42 vs SSP7N60
IRFBC42 Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRFBC42 vs IRFBC42
IRFBC40 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC IRFBC42 vs IRFBC40
IRFBC40 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRFBC42 vs IRFBC40
IRFBC42PBF Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42 vs IRFBC42PBF
MTP6N60 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBC42 vs MTP6N60
MTP6N60E 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBC42 vs MTP6N60E
Part Number Description Manufacturer Compare
IRFBC42 Power Field-Effect Transistor, 5.4A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Harris Semiconductor IRFBC42 vs IRFBC42
IRFBC40 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42 vs IRFBC40
MTP6N60E 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRFBC42 vs MTP6N60E
BUK457-600B TRANSISTOR 7.1 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFBC42 vs BUK457-600B
IRFBC42PBF Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42 vs IRFBC42PBF
SSP7N60 Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRFBC42 vs SSP7N60
IRFBC40 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRFBC42 vs IRFBC40
MTP6N60 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBC42 vs MTP6N60
IRFBC40PBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC42 vs IRFBC40PBF
IRFBC40LCPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRFBC42 vs IRFBC40LCPBF

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