Datasheets
IRFD220PBF by:

Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFD220PBF by Vishay Intertechnologies

Overview of IRFD220PBF by Vishay Intertechnologies

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Automotive Motor control systems

Price & Stock for IRFD220PBF

Part # Distributor Description Stock Price Buy
DISTI # 97K1987
Newark Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFD220PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $0.9880
  • 10 $0.7040
  • 25 $0.6250
  • 50 $0.5490
  • 100 $0.4650
  • 500 $0.3940
  • 1,000 $0.3470
  • 2,500 $0.3170
$0.3170 / $0.9880 Buy Now
DISTI # 19K8156
Newark N Channel Mosfet, 200V, 800Ma, Hd-1, Transistor Polarity:N Channel, Continuous Drain Current Id:800Ma, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.8Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V Rohs Compliant: Yes |Vishay IRFD220PBF RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 500 $0.7400
$0.7400 Buy Now
DISTI # IRFD220PBF
Avnet Americas MOSFET N-CHANNEL 200V - Bulk (Alt: IRFD220PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Bulk 0
RFQ
DISTI # 70078895
RS Power MOSFET, N-Ch, VDSS 200V, RDS(ON) 0.8Ohm, ID 0.8A, HD-1,PD 1W, VGS+/-20V, gFS 0.6S | Vishay PCS IRFD220PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.3400
  • 10 $1.2800
  • 50 $1.2100
  • 100 $1.1400
$1.1400 / $1.3400 RFQ
Future Electronics Single N-Channel 200 V 0.8 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 4858
Tube
  • 1 $0.7100
  • 75 $0.6850
  • 250 $0.6550
  • 1,000 $0.6300
  • 3,000 $0.5800
$0.5800 / $0.7100 Buy Now
Bristol Electronics   9
RFQ
DISTI # IRFD220PBF
TTI MOSFETs HVMDIP 200V .8A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 100 Package Multiple: 100 Container: Tube Americas - 5300
In Stock
  • 100 $0.6090
  • 500 $0.5960
  • 1,000 $0.5600
  • 2,500 $0.5490
$0.5490 / $0.6090 Buy Now
DISTI # IRFD220PBF
TME Transistor: N-MOSFET, unipolar, 200V, 0.5A, 1W, DIP4 Min Qty: 1 785
  • 1 $0.9430
  • 5 $0.6000
  • 25 $0.5290
  • 100 $0.4760
  • 500 $0.4440
$0.4440 / $0.9430 Buy Now
ComSIT USA POWER MOSFET Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 400
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # C1S803600853999
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 1725
  • 1 $0.8447
  • 10 $0.7531
  • 100 $0.6160
  • 500 $0.5795
  • 1,000 $0.5361
$0.5361 / $0.8447 Buy Now
DISTI # C1S803608669916
Chip1Stop MOSFET RoHS: Compliant 1375
  • 95 $0.8820
  • 500 $0.8450
$0.8450 / $0.8820 Buy Now
DISTI # IRFD220PBF
EBV Elektronik Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP (Alt: IRFD220PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFD220PBF

IRFD220PBF CAD Models

IRFD220PBF Part Data Attributes

IRFD220PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD220PBF Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.8 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD220PBF

This table gives cross-reference parts and alternative options found for IRFD220PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD220PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFD220 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix IRFD220PBF vs IRFD220
IRFD220 800mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HEXDIP-4 Intersil Corporation IRFD220PBF vs IRFD220
SIHFD220-E3 TRANSISTOR 800 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP-4, FET General Purpose Small Signal Vishay Siliconix IRFD220PBF vs SIHFD220-E3
IRFD220 800mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD220PBF vs IRFD220
Part Number Description Manufacturer Compare
IRFD220 800mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD220PBF vs IRFD220
IRFD220 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix IRFD220PBF vs IRFD220

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