-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
97K1987
|
Newark | Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFD220PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.3170 / $0.9880 | Buy Now |
DISTI #
19K8156
|
Newark | N Channel Mosfet, 200V, 800Ma, Hd-1, Transistor Polarity:N Channel, Continuous Drain Current Id:800Ma, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.8Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V Rohs Compliant: Yes |Vishay IRFD220PBF RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$0.7400 | Buy Now |
DISTI #
IRFD220PBF
|
Avnet Americas | MOSFET N-CHANNEL 200V - Bulk (Alt: IRFD220PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Bulk | 0 |
|
RFQ | |
DISTI #
70078895
|
RS | Power MOSFET, N-Ch, VDSS 200V, RDS(ON) 0.8Ohm, ID 0.8A, HD-1,PD 1W, VGS+/-20V, gFS 0.6S | Vishay PCS IRFD220PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$1.1400 / $1.3400 | RFQ |
|
Future Electronics | Single N-Channel 200 V 0.8 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 4858Tube |
|
$0.5800 / $0.7100 | Buy Now |
|
Bristol Electronics | 9 |
|
RFQ | ||
DISTI #
IRFD220PBF
|
TTI | MOSFETs HVMDIP 200V .8A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 100 Package Multiple: 100 Container: Tube |
Americas - 5300 In Stock |
|
$0.5490 / $0.6090 | Buy Now |
DISTI #
IRFD220PBF
|
TME | Transistor: N-MOSFET, unipolar, 200V, 0.5A, 1W, DIP4 Min Qty: 1 | 785 |
|
$0.4430 / $0.9410 | Buy Now |
|
ComSIT USA | POWER MOSFET Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
|
|
RFQ | |
DISTI #
C1S803600853999
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes | 1715 |
|
$0.5361 / $0.8447 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFD220PBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRFD220PBF
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 0.8 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFD220PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD220PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFD220 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Vishay Siliconix | IRFD220PBF vs IRFD220 |
IRFD220 | 800mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HEXDIP-4 | Intersil Corporation | IRFD220PBF vs IRFD220 |
SIHFD220-E3 | TRANSISTOR 800 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP-4, FET General Purpose Small Signal | Vishay Siliconix | IRFD220PBF vs SIHFD220-E3 |
IRFD220 | 800mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Motorola Mobility LLC | IRFD220PBF vs IRFD220 |