Part Details for IRFE110-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFE110-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for IRFE110-JQR-B
IRFE110-JQR-B CAD Models
IRFE110-JQR-B Part Data Attributes
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IRFE110-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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Compare Parts:
IRFE110-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | LCC | |
| Package Description | CHIP CARRIER, R-CQCC-N16 | |
| Pin Count | 18 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 7 mJ | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N16 | |
| Number of Elements | 1 | |
| Number of Terminals | 16 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFE110-JQR-B
This table gives cross-reference parts and alternative options found for IRFE110-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE110-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFE110-JQR-BE4 | Power Field-Effect Transistor, 3.1A I(D), 100V, 0.69ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE110-JQR-B vs IRFE110-JQR-BE4 |
| JANTX2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | IRFE110-JQR-B vs JANTX2N6782U |
| IRFE110-QR-JQR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110-JQR-B vs IRFE110-QR-JQR-B |
| JAN2N6782U | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | IRFE110-JQR-B vs JAN2N6782U |
| JANTXV2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | IRFE110-JQR-B vs JANTXV2N6782U |
| 2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | IRFE110-JQR-B vs 2N6782U |
| IRFE110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110-JQR-B vs IRFE110 |
| IRFE110E4 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110-JQR-B vs IRFE110E4 |
| IRFE110-QR-JQR-B | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110-JQR-B vs IRFE110-QR-JQR-B |
| IRFE110 | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110-JQR-B vs IRFE110 |