There are no models available for this part yet.
Overview of IRFE110 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFE110 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Future Electronics | IRF Series 100 V 3.5 A 18-Pin LLCC Surface Mount Transistor RoHS: Not Compliant pbFree: No Min Qty: 1 Package Multiple: 1 Container: Bulk | 0Bulk |
|
$56.3100 | Buy Now |
CAD Models for IRFE110 by Infineon Technologies AG
Part Data Attributes for IRFE110 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
CHIP CARRIER, R-CQCC-N15
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas)
|
7 mJ
|
Case Connection
|
SOURCE
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
3.5 A
|
Drain-source On Resistance-Max
|
0.69 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-CQCC-N15
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
15
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
11 W
|
Pulsed Drain Current-Max (IDM)
|
14 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
QUAD
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFE110
This table gives cross-reference parts and alternative options found for IRFE110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFE110-JQR-BE4 | Power Field-Effect Transistor, 3.1A I(D), 100V, 0.69ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE110 vs IRFE110-JQR-BE4 |
JANTX2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | IRFE110 vs JANTX2N6782U |
IRFE110-QR-JQR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110 vs IRFE110-QR-JQR-B |
JAN2N6782U | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | IRFE110 vs JAN2N6782U |
JANTXV2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | IRFE110 vs JANTXV2N6782U |
2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | IRFE110 vs 2N6782U |
IRFE110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110 vs IRFE110 |
IRFE110E4 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110 vs IRFE110E4 |
IRFE110-QR-JQR-B | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110 vs IRFE110-QR-JQR-B |
IRFE110-JQR-B | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110 vs IRFE110-JQR-B |
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