Datasheets
IRFL014PBF by:

Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

Part Details for IRFL014PBF by Vishay Intertechnologies

Overview of IRFL014PBF by Vishay Intertechnologies

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Price & Stock for IRFL014PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFL014PBF
Avnet Americas Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL014PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
DISTI # 70078917
RS MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.2Ohm, ID 2.7A, SOT-223,PD 3.1W, VGS +/-20V | Vishay PCS IRFL014PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 1576
  • 1 $0.8000
  • 10 $0.7600
  • 50 $0.7200
  • 100 $0.6800
$0.6800 / $0.8000 Buy Now

Part Details for IRFL014PBF

IRFL014PBF CAD Models

IRFL014PBF Part Data Attributes

IRFL014PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFL014PBF Vishay Intertechnologies Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-261AA
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL014PBF

This table gives cross-reference parts and alternative options found for IRFL014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHFL014TR-GE3 TRANSISTOR 2700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal Vishay Siliconix IRFL014PBF vs SIHFL014TR-GE3
IRFL014TRPBF Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies IRFL014PBF vs IRFL014TRPBF
IRFL014TRPBF Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier IRFL014PBF vs IRFL014TRPBF
IRFL014 Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL014PBF vs IRFL014
IRFL014TR Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL014PBF vs IRFL014TR
Part Number Description Manufacturer Compare
IRFL014TR Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL014PBF vs IRFL014TR
IRFL014TRPBF Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies IRFL014PBF vs IRFL014TRPBF
IRFL014TRPBF Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier IRFL014PBF vs IRFL014TRPBF
SIHFL014TR-GE3 Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies IRFL014PBF vs SIHFL014TR-GE3
IRFL014 Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL014PBF vs IRFL014

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