Part Details for IRFN150SMD-JQR-B by TT Electronics Resistors
Overview of IRFN150SMD-JQR-B by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRFN150SMD-JQR-B
IRFN150SMD-JQR-B CAD Models
IRFN150SMD-JQR-B Part Data Attributes
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IRFN150SMD-JQR-B
TT Electronics Resistors
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Datasheet
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IRFN150SMD-JQR-B
TT Electronics Resistors
Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 108 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFN150SMD-JQR-B
This table gives cross-reference parts and alternative options found for IRFN150SMD-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN150SMD-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFN150PBF | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | International Rectifier | IRFN150SMD-JQR-B vs IRFN150PBF |
| 2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRFN150SMD-JQR-B vs 2N7224U |
| IRFN150SMD-JQR-B | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD-JQR-B vs IRFN150SMD-JQR-B |
| IRFN150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | International Rectifier | IRFN150SMD-JQR-B vs IRFN150 |
| IRFN150 | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD-JQR-B vs IRFN150 |
| IRFN150R4 | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD-JQR-B vs IRFN150R4 |
| IRFN150SMD-JQR-BR4 | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN150SMD-JQR-B vs IRFN150SMD-JQR-BR4 |
| IRFN150SMD | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN150SMD-JQR-B vs IRFN150SMD |
| 2N7224UE3 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | Microsemi Corporation | IRFN150SMD-JQR-B vs 2N7224UE3 |
| JANTXV2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | Microsemi Corporation | IRFN150SMD-JQR-B vs JANTXV2N7224U |