Part Details for IRFN150SMD-JQR-BR4 by TT Electronics Resistors
Overview of IRFN150SMD-JQR-BR4 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRFN150SMD-JQR-BR4
IRFN150SMD-JQR-BR4 CAD Models
IRFN150SMD-JQR-BR4 Part Data Attributes
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IRFN150SMD-JQR-BR4
TT Electronics Resistors
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Datasheet
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IRFN150SMD-JQR-BR4
TT Electronics Resistors
Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 108 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFN150SMD-JQR-BR4
This table gives cross-reference parts and alternative options found for IRFN150SMD-JQR-BR4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN150SMD-JQR-BR4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFN150SMD-JQR-B | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD-JQR-BR4 vs IRFN150SMD-JQR-B |
| IRFN150SMD | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN150SMD-JQR-BR4 vs IRFN150SMD |
| 2N7224UPBF | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRFN150SMD-JQR-BR4 vs 2N7224UPBF |
| 2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRFN150SMD-JQR-BR4 vs 2N7224U |
| IRFN150R4 | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD-JQR-BR4 vs IRFN150R4 |
| IRFN150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | Infineon Technologies AG | IRFN150SMD-JQR-BR4 vs IRFN150 |
| 2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | Microsemi Corporation | IRFN150SMD-JQR-BR4 vs 2N7224U |
| IRFN150SMDR4 | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN150SMD-JQR-BR4 vs IRFN150SMDR4 |
| JANTXV2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | Microsemi Corporation | IRFN150SMD-JQR-BR4 vs JANTXV2N7224U |
| IRFN150SMD | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD-JQR-BR4 vs IRFN150SMD |