Part Details for IRFP350 by Rochester Electronics LLC
Overview of IRFP350 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFP350
IRFP350 CAD Models
IRFP350 Part Data Attributes
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IRFP350
Rochester Electronics LLC
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Datasheet
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IRFP350
Rochester Electronics LLC
16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP350
This table gives cross-reference parts and alternative options found for IRFP350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ323 | 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA | Rochester Electronics LLC | IRFP350 vs BUZ323 |
| IRFP353 | Power Field-Effect Transistor, 13A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP350 vs IRFP353 |
| SSH22N40 | Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP350 vs SSH22N40 |
| IRFP350 | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | IRFP350 vs IRFP350 |
| MTW16N40E | 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | Rochester Electronics LLC | IRFP350 vs MTW16N40E |
| IRFP353 | Power Field-Effect Transistor, 14A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP350 vs IRFP353 |
| IRFP350 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP350 vs IRFP350 |
| BUZ323 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Infineon Technologies AG | IRFP350 vs BUZ323 |
| SSH22N35 | Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP350 vs SSH22N35 |
| IRFP350PBF | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | IRFP350 vs IRFP350PBF |