There are no models available for this part yet.
Overview of IRFPG50 by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 4 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Telecommunications
Automotive
Price & Stock for IRFPG50 by International Rectifier
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 65 |
|
RFQ | ||||
Quest Components | MOSFET Transistor, N-Channel, TO-247AC | 35 |
|
$3.0000 / $4.5000 | Buy Now |
CAD Models for IRFPG50 by International Rectifier
Part Data Attributes for IRFPG50 by International Rectifier
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
800 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
1000 V
|
Drain Current-Max (ID)
|
6.1 A
|
Drain-source On Resistance-Max
|
2 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-247AC
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
225
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
190 W
|
Power Dissipation-Max (Abs)
|
190 W
|
Pulsed Drain Current-Max (IDM)
|
24 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFPG50
This table gives cross-reference parts and alternative options found for IRFPG50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPG50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFPG50PBF | Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | IRFPG50 vs IRFPG50PBF |
MTW6N100E | 6A, 1000V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | onsemi | IRFPG50 vs MTW6N100E |
2SK1120 | TRANSISTOR 8 A, 1000 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IRFPG50 vs 2SK1120 |
STW7NA100 | 7A, 1000V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | STMicroelectronics | IRFPG50 vs STW7NA100 |
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