Datasheets
IRFR014TRL by:

Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for IRFR014TRL by Vishay Intertechnologies

Overview of IRFR014TRL by Vishay Intertechnologies

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Part Details for IRFR014TRL

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IRFR014TRL Part Data Attributes

IRFR014TRL Vishay Intertechnologies
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IRFR014TRL Vishay Intertechnologies Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 47 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR014TRL

This table gives cross-reference parts and alternative options found for IRFR014TRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR014TRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHFR014TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR014TRL vs SIHFR014TR-GE3
IRFR014TRRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR014TRL vs IRFR014TRRPBF
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation IRFR014TRL vs IRFR014
IRFR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014TRL vs IRFR014TRPBF
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRL vs IRFR014
IRFR014-T1 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRL vs IRFR014-T1
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014TRL vs IRFR014
IRFR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014TRL vs IRFR014TRLPBF
Part Number Description Manufacturer Compare
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation IRFR014TRL vs IRFR014
IRFR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014TRL vs IRFR014TRPBF
STD12NE06 12A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics IRFR014TRL vs STD12NE06
SIHFR014TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR014TRL vs SIHFR014TR-GE3
IRFR014TRRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR014TRL vs IRFR014TRRPBF
IRFR014-T1 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRL vs IRFR014-T1
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR014TRL vs IRFR014
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014TRL vs IRFR014
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRL vs IRFR014

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