Datasheets
IRFR014TRPBF by:

Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3

Part Details for IRFR014TRPBF by Vishay Intertechnologies

Overview of IRFR014TRPBF by Vishay Intertechnologies

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Price & Stock for IRFR014TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 56AJ9891
Newark Mosfet, N-Ch, 60V, 7.7A, To-252 Rohs Compliant: Yes |Vishay IRFR014TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2404
  • 1 $1.0300
  • 10 $0.8670
  • 25 $0.7980
  • 50 $0.7280
  • 100 $0.6580
$0.6580 / $1.0300 Buy Now
DISTI # 63J6903
Newark N Channel Mosfet, 60V, 7.7A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR014TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # IRFR014TRPBF
Avnet Americas Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel 2000
  • 2,000 $0.5427
$0.5427 Buy Now
DISTI # 844-IRFR014TRPBF
Mouser Electronics MOSFET N-Chan 60V 7.7 Amp RoHS: Compliant 5781
  • 1 $0.9500
  • 10 $0.7860
  • 100 $0.5850
  • 500 $0.5390
$0.5390 / $0.9500 Buy Now
Future Electronics Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $0.3650
  • 4,000 $0.3550
  • 6,000 $0.3500
  • 8,000 $0.3500
  • 10,000 $0.3400
$0.3400 / $0.3650 Buy Now
Future Electronics Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $0.3650
  • 4,000 $0.3550
  • 6,000 $0.3500
  • 8,000 $0.3500
  • 10,000 $0.3400
$0.3400 / $0.3650 Buy Now
Quest Components 7.7A, 60V, 0.2OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252 560
  • 1 $1.1590
  • 87 $0.5795
  • 346 $0.4636
$0.4636 / $1.1590 Buy Now
DISTI # IRFR014TRPBF
TTI MOSFET N-Chan 60V 7.7 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 0
  • 2,000 $0.3680
  • 4,000 $0.3600
  • 6,000 $0.3530
  • 10,000 $0.3450
$0.3450 / $0.3680 Buy Now
ComSIT USA Power MOSFET Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant Europe - 10000
RFQ
DISTI # IRFR014TRPBF
Avnet Asia Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days 0
  • 2,000 $0.8899
  • 4,000 $0.8775
  • 6,000 $0.8655
  • 10,000 $0.8538
  • 20,000 $0.8313
  • 50,000 $0.8100
  • 100,000 $0.7897
$0.7897 / $0.8899 Buy Now
DISTI # IRFR014TRPBF
EBV Elektronik Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFR014TRPBF

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IRFR014TRPBF Part Data Attributes

IRFR014TRPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFR014TRPBF Vishay Intertechnologies Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 47 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR014TRPBF

This table gives cross-reference parts and alternative options found for IRFR014TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR014TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHFR014TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR014TRPBF vs SIHFR014TR-GE3
IRFR014TRRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR014TRPBF vs IRFR014TRRPBF
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation IRFR014TRPBF vs IRFR014
IRFR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies IRFR014TRPBF vs IRFR014TRL
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRPBF vs IRFR014
IRFR014-T1 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRPBF vs IRFR014-T1
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014TRPBF vs IRFR014
IRFR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014TRPBF vs IRFR014TRLPBF
Part Number Description Manufacturer Compare
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation IRFR014TRPBF vs IRFR014
IRFR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies IRFR014TRPBF vs IRFR014TRL
STD12NE06 12A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics IRFR014TRPBF vs STD12NE06
SIHFR014TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR014TRPBF vs SIHFR014TR-GE3
IRFR014TRRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR014TRPBF vs IRFR014TRRPBF
IRFR014-T1 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRPBF vs IRFR014-T1
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR014TRPBF vs IRFR014
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014TRPBF vs IRFR014
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014TRPBF vs IRFR014

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