Datasheets
IRFR1205 by:

Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

Part Details for IRFR1205 by International Rectifier

Overview of IRFR1205 by International Rectifier

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Price & Stock for IRFR1205

Part # Distributor Description Stock Price Buy
Bristol Electronics   321
RFQ
Bristol Electronics   Min Qty: 1 1102
  • 1 $8.7750
  • 6 $6.5813
  • 17 $5.9231
  • 29 $5.4844
  • 74 $5.2650
  • 153 $5.0456
$5.0456 / $8.7750 Buy Now
Bristol Electronics   1438
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-252AA 13
  • 1 $1.0500
  • 6 $0.8750
$0.8750 / $1.0500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 160
  • 1 $1.7500
  • 15 $1.0500
  • 58 $0.8750
$0.8750 / $1.7500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 173
  • 1 $2.9400
  • 42 $1.6170
  • 94 $1.4700
$1.4700 / $2.9400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 470
  • 1 $3.6528
  • 165 $1.6894
  • 356 $1.5068
$1.5068 / $3.6528 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 480
  • 1 $11.7000
  • 138 $7.0200
  • 286 $6.7275
$6.7275 / $11.7000 Buy Now

Part Details for IRFR1205

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IRFR1205 Part Data Attributes:

IRFR1205 International Rectifier
Buy Now Datasheet
Compare Parts:
IRFR1205 International Rectifier Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR1205

This table gives cross-reference parts and alternative options found for IRFR1205. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1205, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR1205PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR1205PBF
IRFR1205TRR Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR1205TRR
IRFR1205 Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Infineon Technologies AG IRFR1205 vs IRFR1205
IRFR1205TRLPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR1205 vs IRFR1205TRLPBF
IRFR1205TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR1205 vs IRFR1205TRPBF
IRFR1205TR Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR1205TR
IRFR1205TRLPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR1205TRLPBF
IRFR1205TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR1205TRPBF
IRFR1205TRL Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR1205TRL
IRFR1205PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR1205 vs IRFR1205PBF
Part Number Description Manufacturer Compare
IRFR4105PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR4105PBF
HUFA76413D3 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRFR1205 vs HUFA76413D3
IRFZ20 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFR1205 vs IRFZ20
IRFR1205PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR1205 vs IRFR1205PBF
NTD18N06L-1G 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3 Rochester Electronics LLC IRFR1205 vs NTD18N06L-1G
934056258127 TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors IRFR1205 vs 934056258127
FDB045AN08A0 Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation IRFR1205 vs FDB045AN08A0
MTD3055EL1 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 Motorola Mobility LLC IRFR1205 vs MTD3055EL1
BUK9277-55A 18A, 55V, 0.086ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, DPAK-3 NXP Semiconductors IRFR1205 vs BUK9277-55A
PHB21N06LT,118 N-channel TrenchMOS logic level FET D2PAK 3-Pin NXP Semiconductors IRFR1205 vs PHB21N06LT,118

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