Datasheets
IRFR120TRRPBF by:

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Part Details for IRFR120TRRPBF by Vishay Intertechnologies

Overview of IRFR120TRRPBF by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR120TRRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR120TRRPBF
Avnet Americas MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRFR120TRRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4991
$0.4991 Buy Now
DISTI # 844-IRFR120TRRPBF
Mouser Electronics MOSFETs N-Chan 100V 7.7 Amp RoHS: Compliant 0
  • 3,000 $0.6310
  • 6,000 $0.6010
  • 9,000 $0.5730
$0.5730 / $0.6310 Order Now
Future Electronics N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak Mosfet RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5850
  • 6,000 $0.5650
$0.5650 / $0.5850 Buy Now
Future Electronics N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak Mosfet RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5850
  • 6,000 $0.5650
$0.5650 / $0.5850 Buy Now
DISTI # IRFR120TRRPBF
TTI MOSFETs N-Chan 100V 7.7 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.5850
  • 6,000 $0.5650
$0.5650 / $0.5850 Buy Now
DISTI # C1S803601640754
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 3000
  • 3,000 $0.2630
$0.2630 Buy Now
DISTI # IRFR120TRRPBF
EBV Elektronik Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR120TRRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFR120TRRPBF

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IRFR120TRRPBF Part Data Attributes

IRFR120TRRPBF Vishay Intertechnologies
Buy Now Datasheet
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IRFR120TRRPBF Vishay Intertechnologies Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 34 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR120TRRPBF

This table gives cross-reference parts and alternative options found for IRFR120TRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120TRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR120TRRPBF vs IRFR120PBF
IRFR120T Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRRPBF vs IRFR120T
SIHFR120TR-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRRPBF vs SIHFR120TR-GE3
IRFR120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRRPBF vs IRFR120
IRFR120 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Vishay Siliconix IRFR120TRRPBF vs IRFR120
SIHFR120-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRRPBF vs SIHFR120-GE3
IRFR120TRLPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRRPBF vs IRFR120TRLPBF
IRFR120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR120TRRPBF vs IRFR120
IRFR120_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRRPBF vs IRFR120_R4941
SIHFR120TRL-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRRPBF vs SIHFR120TRL-GE3
Part Number Description Manufacturer Compare
IRFR120A Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR120TRRPBF vs IRFR120A
IRFR120A Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR120TRRPBF vs IRFR120A
SIHFR120-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRRPBF vs SIHFR120-GE3
SIHFR120TRL-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRRPBF vs SIHFR120TRL-GE3
IRFR120_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRRPBF vs IRFR120_R4941
IRFR120TRLPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRRPBF vs IRFR120TRLPBF
SIHFR120TR-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRRPBF vs SIHFR120TR-GE3
IRFR120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR120TRRPBF vs IRFR120PBF
IRFR120TRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRRPBF vs IRFR120TRPBF
IRFR120ATM Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR120TRRPBF vs IRFR120ATM

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